Paper
9 June 2011 Non-cryogenic cooled MWIR with swap-limited carbon nanotubes
H. Szu, Y. L. Shen, J. Wu, K. Reinhardt
Author Affiliations +
Abstract
For EOIR nanotechnology sensors, we elucidated the quantum mechanical nature of the Einstein photoelectric effect in terms of a field-effect transistor (FET) made of Carbon NanoTube (CNT) semiconductors. Consequently, we discovered a surprising low-pass band gap property, as opposed to the traditional sharp band-pass band-gaps. In other words, the minimum amount of photon energy shining in the middle of CNT is necessary to excite the semiconductor CNT electrons. The conduction electron will spiral in a steady over the surface to minimize the collision recombination when travelling from the cathode end to the anode end by the asymmetric semiconductor-metal (using Pd or Al) Schottky interface effect for read out.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H. Szu, Y. L. Shen, J. Wu, and K. Reinhardt "Non-cryogenic cooled MWIR with swap-limited carbon nanotubes", Proc. SPIE 8058, Independent Component Analyses, Wavelets, Neural Networks, Biosystems, and Nanoengineering IX, 80580P (9 June 2011); https://doi.org/10.1117/12.887539
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Semiconductors

Mid-IR

Carbon nanotubes

Electrons

Sensors

Graphene

Carbon

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