HGcdTe Photovoltaic Array And Its Performance Correlation With Crystal Quality

Fei -Ming Tong; Yang Xiuzhen; Ge Youfang; Huang Guijuan

doi:10.1117/12.941837

10 November 1987 HGcdTe Photovoltaic Array And Its Performance Correlation With Crystal Quality

Fei -Ming Tong, Yang Xiuzhen, Ge Youfang, Huang Guijuan

Proceedings Volume 0819, Infrared Technology XIII; (1987) https://doi.org/10.1117/12.941837
Event: 31st Annual Technical Symposium on Optical and Optoelectronic Applied Sciences and Engineering, 1987, San Diego, CA, United States

Abstract

HgCdTe photovoltaic arrays are developed in 3-5 micron and 8-14 micron wavelength regions. The average detectivities of linear arrays are 3x1ecm.He/W and 2x1e am.Hz1VW, respectively. Good spectral response uniformity within different elements of an array is obtained. HgCdTe material is grown by the solid state recrystallization and traveling heater method with Te as the solvent. The device performance correlation with crystal quality is investigated. The I-V characteristics of HgCdTe photodiodes severely degrade due to precipitates. Active area expension of photovoltaic detector made on slices with high density substructure is obvious. The higher density of subgrain boundaries of the materials, the greater crosstalk of the arrays. Detector performance dependence on slice surface orientation is observed. It shows that n-p junction made on (111) plane is of preferable. Experiments show that the detectivity of photodiode has positive correlation with below-gap optical transmittance of slice. The optical transmittance can be used as one of selection criteria for materials.

Citation Download Citation

Fei -Ming Tong, Yang Xiuzhen, Ge Youfang, and Huang Guijuan "HGcdTe Photovoltaic Array And Its Performance Correlation With Crystal Quality", Proc. SPIE 0819, Infrared Technology XIII, (10 November 1987); https://doi.org/10.1117/12.941837

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