Assessment of negative tone development challenges

Sohan Singh Mehta; Yongan Xu; Guillaume Landie; Vikrant Chauhan; Sean D. Burns; Peggy Lawson; Bassem Hamieh; Jerome Wandell; Martin Glodde; Yu Yang Sun; Mark Kelling; Alan Thomas; Jeong Soo Kim; James Chen; Hirokazu Kato; Chiahsun Tseng; Chiew-Seng Koay; Yoshinori Matsui; Martin Burkhardt; Yunpeng Yin; David Horak; Shyng-Tsong Chen; Yann Mignot; Yannick Loquet; Matthew Colburn; John Arnold; Terry Spooner; Lior Huli; Dave Hetzer; Jason Cantone; Shinichiro Kawakami; Shannon Dunn

doi:10.1117/12.917560

20 March 2012 Assessment of negative tone development challenges

Sohan Singh Mehta, Yongan Xu, Guillaume Landie, Vikrant Chauhan, Sean D. Burns, Peggy Lawson, Bassem Hamieh, Jerome Wandell, Martin Glodde, Yu Yang Sun, Mark Kelling, Alan Thomas, Jeong Soo Kim, James Chen, Hirokazu Kato, Chiahsun Tseng, Chiew-Seng Koay, Yoshinori Matsui, Martin Burkhardt, Yunpeng Yin, David Horak, Shyng-Tsong Chen, Yann Mignot, Yannick Loquet, Matthew Colburn, John Arnold, Terry Spooner, Lior Huli, Dave Hetzer, Jason Cantone, Shinichiro Kawakami, Shannon Dunn

Author Affiliations +

Proceedings Volume 8325, Advances in Resist Materials and Processing Technology XXIX; 832506 (2012) https://doi.org/10.1117/12.917560
Event: SPIE Advanced Lithography, 2012, San Jose, California, United States

Abstract

The objective of this work is to describe the advances in 193nm photoresists using negative tone developer and key challenges associated with 20nm and beyond technology nodes. Unlike positive tone resists which use protected polymer as the etch block, negative tone developer resists must adhere to a substrate with a deprotected polymer matrix; this poses adhesion and bonding challenges for this new patterning technology. This problem can be addressed when these photo resists are coated on anti-reflective coatings with plentiful silicon in them (SiARC), which are specifically tailored for compatibility with the solvent developing resist. We characterized these modified SiARC materials and found improvement in pattern collapse thru-pitches down to 100nm. Fundamental studies were carried out to understand the interactions between the resist materials and the developers. Different types of developers were evaluated and the best candidate was down selected for contact holes and line space applications. The negative tone developer proximity behavior has been investigated through optical proximity correction (OPC) verification. The defectivity through wafer has been driven down from over 1000 adders/wafer to less than 100 adders/wafer by optimizing the develop process. Electric yield test has been conducted and compared between positive tone and negative tone developer strategies. In addition, we have done extensive experimental work to reduce negative tone developer volume per wafer to bring cost of ownership (CoO) to a value that is equal or even lower than that of positive tone CoO.

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Sohan Singh Mehta, Yongan Xu, Guillaume Landie, Vikrant Chauhan, Sean D. Burns, Peggy Lawson, Bassem Hamieh, Jerome Wandell, Martin Glodde, Yu Yang Sun, Mark Kelling, Alan Thomas, Jeong Soo Kim, James Chen, Hirokazu Kato, Chiahsun Tseng, Chiew-Seng Koay, Yoshinori Matsui, Martin Burkhardt, Yunpeng Yin, David Horak, Shyng-Tsong Chen, Yann Mignot, Yannick Loquet, Matthew Colburn, John Arnold, Terry Spooner, Lior Huli, Dave Hetzer, Jason Cantone, Shinichiro Kawakami, and Shannon Dunn "Assessment of negative tone development challenges", Proc. SPIE 8325, Advances in Resist Materials and Processing Technology XXIX, 832506 (20 March 2012); https://doi.org/10.1117/12.917560

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