Photoresist strip challenges for advanced lithography at 20nm technology node and beyond

Ivan L. Berry III; Carlo Waldfried; Dwight Roh; Shijian Luo; David Mattson; James DeLuca; Orlando Escorcia

doi:10.1117/12.918054

16 March 2012 Photoresist strip challenges for advanced lithography at 20nm technology node and beyond

Ivan L. Berry III, Carlo Waldfried, Dwight Roh, Shijian Luo, David Mattson, James DeLuca, Orlando Escorcia

Proceedings Volume 8328, Advanced Etch Technology for Nanopatterning; 83280J (2012) https://doi.org/10.1117/12.918054
Event: SPIE Advanced Lithography, 2012, San Jose, California, United States

Abstract

Photoresist strip has traditionally been a low technology process step, but is becoming increasingly more complex with the migration to ultra-shallow junctions, 3D structures, double patterning, and high-mobility channels. At junction depths of a few tens of nanometers, surface effects become increasingly important. Small changes to surface conditions can affect junction resistivity, junction depth, and dopant activation. Advanced high-resolution chemically amplified resist can be problematic when used as an implant mask. Ion beam induced chain scission and photoacid generation can lead to thermal instabilities during the resist strip process. Multilevel resist structures can be difficult to remove and rework and high aspect ratio 3D structures can require near infinite selectivity during the strip processes. This paper will summarize the issues and offer options for solutions.

Citation Download Citation

Ivan L. Berry III, Carlo Waldfried, Dwight Roh, Shijian Luo, David Mattson, James DeLuca, and Orlando Escorcia "Photoresist strip challenges for advanced lithography at 20nm technology node and beyond", Proc. SPIE 8328, Advanced Etch Technology for Nanopatterning, 83280J (16 March 2012); https://doi.org/10.1117/12.918054

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