The features of x-ray topographic contrast formation in silicon with dislocation clusters

Igor M. Fodchuk; Sergiy M. Novikov; Andriy Ya. Struk

doi:10.1117/12.920984

22 November 2011 The features of x-ray topographic contrast formation in silicon with dislocation clusters

Igor M. Fodchuk, Sergiy M. Novikov, Andriy Ya. Struk

Proceedings Volume 8338, Tenth International Conference on Correlation Optics; 83381B (2011) https://doi.org/10.1117/12.920984
Event: Correlation Optics 2011, 2011, Chernivsti, Ukraine

Abstract

The features of formation of diffraction images of edge dislocation sets forming clusters (of two, three and more dislocations) as well as small-angle dislocation boundaries (walls) were studied. Various intensity interference effects of rescattering and internal reflection of the newly formed and already existing wave fields on thickness distributions of intensity for the case of presence in the same glide plane of edge dislocations with parallel and anti-parallel Burgers vectors were discovered.

Citation Download Citation

Igor M. Fodchuk, Sergiy M. Novikov, and Andriy Ya. Struk "The features of x-ray topographic contrast formation in silicon with dislocation clusters", Proc. SPIE 8338, Tenth International Conference on Correlation Optics, 83381B (22 November 2011); https://doi.org/10.1117/12.920984

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