Black silicon photovoltaics

Kevin Füchsel; Matthias Kroll; Thomas Käsebier; Martin Otto; Thomas Pertsch; Ernst-Bernhard Kley; Ralf B. Wehrspohn; Norbert Kaiser; Andreas Tünnermann

doi:10.1117/12.923748

2 May 2012 Black silicon photovoltaics

Kevin Füchsel, Matthias Kroll, Thomas Käsebier, Martin Otto, Thomas Pertsch, Ernst-Bernhard Kley, Ralf B. Wehrspohn, Norbert Kaiser, Andreas Tünnermann

Author Affiliations +

Proceedings Volume 8438, Photonics for Solar Energy Systems IV; 84380M (2012) https://doi.org/10.1117/12.923748
Event: SPIE Photonics Europe, 2012, Brussels, Belgium

Abstract

The challenge of future solar cell technologies is the combination of highly efficient cell concepts and low cost fabrication processes. A promising concept for high efficiencies is the usage of nanostructured silicon, so-called black silicon. Due to its unique surface geometry the optical path of the incoming light through the silicon substrate is enhanced to nearly perfect light trapping. Combined with the semiconductor-insulator-semiconductor (SIS) solar cell concept it is possible to fabricate a low cost device by using conventional sputtering technologies. Therefore, a thin insulator is coated on the nanostructured silicon surface, followed by the deposition of a transparent conductive oxide (TCO), e.g. indium tin oxide (ITO) or aluminum doped zinc oxide (AZO). In such systems the TCO induces a heterojunction, hence, high temperature diffusion processes are not necessary. The optical and geometrical properties of different nanostructured silicon surfaces will be presented. Furthermore, the influence of the used TCO materials will be discussed and the solar cell performance under AM1.5G illumination of unstructured and structured SIS devices is shown.

Citation Download Citation

Kevin Füchsel, Matthias Kroll, Thomas Käsebier, Martin Otto, Thomas Pertsch, Ernst-Bernhard Kley, Ralf B. Wehrspohn, Norbert Kaiser, and Andreas Tünnermann "Black silicon photovoltaics", Proc. SPIE 8438, Photonics for Solar Energy Systems IV, 84380M (2 May 2012); https://doi.org/10.1117/12.923748

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