Paper
17 October 2012 Optical and luminescent properties of CdSe/ZnS and TiO2 semiconductor quantum dots embedded into PMMA layers
Hung-Ju Lin, Yu-Jen Chen, Judikael Le-Rouzo, Alexandre Merlen, Waldir Avansi Jr., Sheng-Hui Chen, François Flory, Cheng-Chung Lee, Valmor Roberto Mastelaro
Author Affiliations +
Abstract
Optical quality PMMA thin film layers including different concentrations of 3nm CdSe/ZnS and 5 nm TiO2 semiconductor quantum dots have been made by spin coating method. Their optical properties show evident consequences of the confinement effects with wavelength bandgap shifting for both types of QDs. The confinement effects are more pronounced for CdSe/ZnS QDs than for TiO2 QDs. Layers including CdSe/ZnS QDs exhibit a strong luminescent behavior centred on 560nm with a stock-shift in front of the first exciton absorption peak.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hung-Ju Lin, Yu-Jen Chen, Judikael Le-Rouzo, Alexandre Merlen, Waldir Avansi Jr., Sheng-Hui Chen, François Flory, Cheng-Chung Lee, and Valmor Roberto Mastelaro "Optical and luminescent properties of CdSe/ZnS and TiO2 semiconductor quantum dots embedded into PMMA layers", Proc. SPIE 8465, Nanostructured Thin Films V, 846510 (17 October 2012); https://doi.org/10.1117/12.929268
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KEYWORDS
Quantum dots

Polymethylmethacrylate

Titanium dioxide

Absorption

Electrons

Semiconductors

Transmission electron microscopy

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