Paper
18 February 2013 Recent progress in wafer-fused VECSELs emitting in the 1310nm and 1550nm bands
A. Sirbu, A. Caliman, A. Mereuta, K. Pierscinski, A. Rantamäki, J. Lyytikäinen, J. Rautiainen, V. Iakovlev, N. Volet, O. Okhotnikov, E. Kapon
Author Affiliations +
Abstract
Recent developments of wafer-fused long-wavelength VECSELs resulted in reaching record high CW output power of 6.6 W at 1300 nm and a coherence length longer than 5 km in fiber and 1 Watt of output power in single frequency regime at 1550 nm. First wafer-fused electrically pumped VECSELs emitting at 1470 nm demonstrate maximum CW output power of 6.5 mW which represents more than 10-times improvement compared with previously published results.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Sirbu, A. Caliman, A. Mereuta, K. Pierscinski, A. Rantamäki, J. Lyytikäinen, J. Rautiainen, V. Iakovlev, N. Volet, O. Okhotnikov, and E. Kapon "Recent progress in wafer-fused VECSELs emitting in the 1310nm and 1550nm bands", Proc. SPIE 8606, Vertical External Cavity Surface Emitting Lasers (VECSELs) III, 86060F (18 February 2013); https://doi.org/10.1117/12.2002461
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Mirrors

Semiconducting wafers

Optical pumping

Electroluminescence

Fabry–Perot interferometers

Oxygen

Reflectivity

RELATED CONTENT

Single mode 1018nm fiber laser with power of 230W
Proceedings of SPIE (March 11 2016)
Tm:glass laser pumping a Ho:YAG laser
Proceedings of SPIE (March 21 2003)
Highly efficient cesium vapor laser
Proceedings of SPIE (February 23 2006)
Profiling of MOCVD and MBE grown VCSEL wafers for...
Proceedings of SPIE (June 16 1993)

Back to Top