The effects of reduced resist consumption process conditions on total raw defects, line and space defects and single line open defects at the 20nm node

Christos F. Karanikas; Jeong Soo Kim

doi:10.1117/12.2011209

29 March 2013 The effects of reduced resist consumption process conditions on total raw defects, line and space defects and single line open defects at the 20nm node

Christos F. Karanikas, Jeong Soo Kim

Author Affiliations +

Proceedings Volume 8682, Advances in Resist Materials and Processing Technology XXX; 868227 (2013) https://doi.org/10.1117/12.2011209
Event: SPIE Advanced Lithography, 2013, San Jose, California, United States

Abstract

Reduced resist consumption (RRC) process is used to reduce chemical shot sizes by 75% or more. However, as we move to smaller technology nodes, the impurities in RRC solvents are becoming increasingly more problematic. In this study, a series of experiments were conducted to reduce total defectivity via RRC process optimization. The 20nm metal layer is optimized for defect reduction at the OPL/BARC interface. This study looks at the effects of no RRC, static RRC dispense condition, dynamic RRC dispense condition, the number of RRC puddles, puddle times and post apply bake (PAB) temperatures. Overall, a 45% reduction in total raw defects is achieved over current production recipes. The reduction, however, comes at the cost of an increase in line and space defects and single line open (SLO) defects. The line and space defects increased by 62% and the SLO defects had a 40% increase.

Citation Download Citation

Christos F. Karanikas and Jeong Soo Kim "The effects of reduced resist consumption process conditions on total raw defects, line and space defects and single line open defects at the 20nm node", Proc. SPIE 8682, Advances in Resist Materials and Processing Technology XXX, 868227 (29 March 2013); https://doi.org/10.1117/12.2011209

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