Accurate 3DEMF mask model for full-chip simulation

Michael C. Lam; Kostas Adam; David Fryer; Christian Zuniga; Haiqing Wei; Michael Oliver; Chris H. Clifford

doi:10.1117/12.2013167

12 April 2013 Accurate 3DEMF mask model for full-chip simulation

Michael C. Lam, Kostas Adam, David Fryer, Christian Zuniga, Haiqing Wei, Michael Oliver, Chris H. Clifford

Proceedings Volume 8683, Optical Microlithography XXVI; 86831D (2013) https://doi.org/10.1117/12.2013167
Event: SPIE Advanced Lithography, 2013, San Jose, California, United States

Abstract

The Domain Decomposition Method (DDM) for approximating the impact of 3DEMF effects was introduced nearly ten years ago as an approach to deliver good accuracy for rapid simulation of full-chip applications. This approximation, which treats mask edges as independent from one another, provided improved model accuracy over the traditional Kirchhoff thin mask model for the case of alternating aperture phase shift masks which featured severe mask topography. This aggressive PSM technology was not widely deployed in manufacturing, and with the advent of thinner absorbing layers, the impact of mask topography has been relatively well contained through the 32 nm technology node, where Kirchhoff mask models have proved effective. At 20 nm and below, however, the thin mask approximation leads to larger errors, and the DDM model is seen to be effective in providing a more accurate representation of the aerial image. The original DDM model assumes normal incidence, and a subsequent version incorporates signals from oblique angles. As mask dimensions become smaller, the assumption of non-interacting mask edges breaks down, and a further refinement of the model is required to account for edge to edge cross talk. In this study, we evaluate the progression of improvements in modeling mask 3DEMF effects by comparing to rigorous simulation results. It is shown that edge to edge interactions can be accurately accounted for in the modified DDM library. A methodology is presented for the generation of an accurate 3DEMF model library which can be used in full chip OPC correction.

Citation Download Citation

Michael C. Lam, Kostas Adam, David Fryer, Christian Zuniga, Haiqing Wei, Michael Oliver, and Chris H. Clifford "Accurate 3DEMF mask model for full-chip simulation", Proc. SPIE 8683, Optical Microlithography XXVI, 86831D (12 April 2013); https://doi.org/10.1117/12.2013167

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available