Quantum-engineered mid-infrared type-II InAs/GaSb superlattice photodetectors for high temperature operations

Z.-B. Tian; T. Schuler-Sandy; S. E. Godoy; H. S. Kim; J. Montoya; S. Myers; B. Klein; E. Plis; S. Krishna

doi:10.1117/12.2016125

18 June 2013 Quantum-engineered mid-infrared type-II InAs/GaSb superlattice photodetectors for high temperature operations

Z.-B. Tian, T. Schuler-Sandy, S. E. Godoy, H. S. Kim, J. Montoya, S. Myers, B. Klein, E. Plis, S. Krishna

Author Affiliations +

Proceedings Volume 8704, Infrared Technology and Applications XXXIX; 87041T (2013) https://doi.org/10.1117/12.2016125
Event: SPIE Defense, Security, and Sensing, 2013, Baltimore, Maryland, United States

Abstract

Over the last several years, owing to the implementation of advanced device architectures, antimony-based type-II superlattice (T2-SL) infrared (IR) photodetectors and their focal plane arrays (FPAs) have achieved significant advancements. Here we present our recent effort towards the development of high operating temperature (HOT) mid-IR (MWIR) photodetectors, which utilizes an interband cascade scheme with discrete InAs/GaSb SL absorbers, sandwiched between electron and hole barriers. This low-noise device architecture has enabled background-limited operation above 150 K (300 K, 2π field-of-view), as well as above room temperature response in the mid-IR region. The detector yields a dark current density of 1.10×10^-7 A/cm² (1.44×10^-3 A/cm²) at -5 mV, and a Johnson-limited D* of 2.22×10¹¹ cmHz^1/2/W (1.58×10⁹ cmHz^1/2/W) at 150 K (room temperature) and 3.6 μm, respectively. In this presentation, we will discuss the operation principles of the interband cascade design and our most recent progress in MWIR photodetectors toward high operating temperatures.

Citation Download Citation

Z.-B. Tian, T. Schuler-Sandy, S. E. Godoy, H. S. Kim, J. Montoya, S. Myers, B. Klein, E. Plis, and S. Krishna "Quantum-engineered mid-infrared type-II InAs/GaSb superlattice photodetectors for high temperature operations", Proc. SPIE 8704, Infrared Technology and Applications XXXIX, 87041T (18 June 2013); https://doi.org/10.1117/12.2016125

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