Paper
26 September 2013 Characterization of CdTe and (CdZn)Te detectors with different metal contacts
J. Pekárek, E. Belas, R. Grill, Š. Uxa, R. B. James
Author Affiliations +
Abstract
In the present work we studied an influence of different types of surface etching and surface passivation of high resistivity CdZnTe-based semiconductor detector material. The aim was to find the optimal conditions to improve the properties of metal-semiconductor contact. The main effort was to reduce the leakage current and thus get better X-ray and gamma-ray spectrum, i.e. to create a detector operating at room temperature based on this semiconductor material with sufficient energy resolution and the maximum charge collection efficiency. Individual surface treatments were characterized by I-V characteristics, spectral analysis and by determination of the profile of the internal electric field.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. Pekárek, E. Belas, R. Grill, Š. Uxa, and R. B. James "Characterization of CdTe and (CdZn)Te detectors with different metal contacts", Proc. SPIE 8852, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XV, 88521F (26 September 2013); https://doi.org/10.1117/12.2023233
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Cited by 1 scholarly publication.
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KEYWORDS
Sensors

Metals

Semiconductors

Electric field sensors

Gamma radiation

Surface finishing

Wet etching

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