Numerical simulation of III-nitride lattice-matched structures for quantum cascade lasers

Sara Shishehchi; Roberto Paiella; Enrico Bellotti

doi:10.1117/12.2040709

7 March 2014 Numerical simulation of III-nitride lattice-matched structures for quantum cascade lasers

Sara Shishehchi, Roberto Paiella, Enrico Bellotti

Proceedings Volume 8980, Physics and Simulation of Optoelectronic Devices XXII; 89800T (2014) https://doi.org/10.1117/12.2040709
Event: SPIE OPTO, 2014, San Francisco, California, United States

Abstract

We present a comparison among GaN/AlGaN, GaN/InAlGaN, and GaAs/AlGaAs quantum cascade structures based on a Monte Carlo study of carrier dynamics, to highlight the improvements offered by nitride latticematched structures. We take into account the interactions of electrons with other electrons as well as LO-phonons. The results obtained from the Monte Carlo simulations are used to calculate the population inversion of each structure to determine its temperature dependence. This study shows that the nitride-based structures offer significantly improved high-temperature performance compared to the GaAs device, including the possibility of room-temperature operation. Furthermore, by virtue of its lattice-matched nature, the GaN/InAlGaN materials system can potentially enable the high-quality growth of thick quantum cascade structures without plastic relaxation, as a way to overcome the structural issues that have so far hindered the development of these devices with nitride semiconductors.

Citation Download Citation

Sara Shishehchi, Roberto Paiella, and Enrico Bellotti "Numerical simulation of III-nitride lattice-matched structures for quantum cascade lasers", Proc. SPIE 8980, Physics and Simulation of Optoelectronic Devices XXII, 89800T (7 March 2014); https://doi.org/10.1117/12.2040709

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