Resist outgassing contamination on EUV multilayer mirror analogues

Diego Alvarado; Yudhishthir Kandel; Jaewoong Sohn; Tonmoy Chakraborty; Dominic Ashworth; Gregory Denbeaux

doi:10.1117/12.2046613

17 April 2014 Resist outgassing contamination on EUV multilayer mirror analogues

Diego Alvarado, Yudhishthir Kandel, Jaewoong Sohn, Tonmoy Chakraborty, Dominic Ashworth, Gregory Denbeaux

Proceedings Volume 9048, Extreme Ultraviolet (EUV) Lithography V; 90481A (2014) https://doi.org/10.1117/12.2046613
Event: SPIE Advanced Lithography, 2014, San Jose, California, United States

Abstract

EUV lithography is a technology enabling next generation electronic devices, but issues with photoresist sensitivity, resolution and line edge roughness as well as tool downtime and throughput remain. As part of the industry's efforts to address these problems we have worked with resist suppliers to quantify the relative contamination rate of a variety of resists on EUV multilayer mirror analogues following ASML approved protocols. Here we present results of our ongoing program to better understand the effect of process parameters such as dose and resist thickness on the contamination rate of ruthenium coated witness plates, additionally we present results from a study on the effectiveness of hydrogen cleaning.

Citation Download Citation

Diego Alvarado, Yudhishthir Kandel, Jaewoong Sohn, Tonmoy Chakraborty, Dominic Ashworth, and Gregory Denbeaux "Resist outgassing contamination on EUV multilayer mirror analogues", Proc. SPIE 9048, Extreme Ultraviolet (EUV) Lithography V, 90481A (17 April 2014); https://doi.org/10.1117/12.2046613

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