Predicting LER PSD caused by mask roughness using a mathematical model

Rene A. Claus; Andrew R. Neureuther; Laura Waller; Patrick P. Naulleau

doi:10.1117/12.2046637

17 April 2014 Predicting LER PSD caused by mask roughness using a mathematical model

Rene A. Claus, Andrew R. Neureuther, Laura Waller, Patrick P. Naulleau

Proceedings Volume 9048, Extreme Ultraviolet (EUV) Lithography V; 90482X (2014) https://doi.org/10.1117/12.2046637
Event: SPIE Advanced Lithography, 2014, San Jose, California, United States

Abstract

EUV masks have replicated multilayer roughness from the substrate or the deposition process which cause line edge roughness (LER) during imaging. We have developed a model, based on the assumption that the roughness is small, that is able to analytically calculate the LER and LER Power Spectral Density (PSD) for any illumination source, defocus, and pitch. We evaluated the model for typical mask roughness values and varied illumination and other parameters to determine how the roughness induced LER behaves under different imaging conditions.

Citation Download Citation

Rene A. Claus, Andrew R. Neureuther, Laura Waller, and Patrick P. Naulleau "Predicting LER PSD caused by mask roughness using a mathematical model", Proc. SPIE 9048, Extreme Ultraviolet (EUV) Lithography V, 90482X (17 April 2014); https://doi.org/10.1117/12.2046637

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available