Mechanisms of the passage of dark currents through Cd(Zn)Te semi-insulating crystals

V. Sklyarchuk; P. Fochuk; I. Rarenko; Z. Zakharuk; O. Sklyarchuk; Ye. Nykoniuk; A. Rybka; V. Kutny; A. E. Bolotnikov; R. B. James

doi:10.1117/12.2062754

5 September 2014 Mechanisms of the passage of dark currents through Cd(Zn)Te semi-insulating crystals

V. Sklyarchuk, P. Fochuk, I. Rarenko, Z. Zakharuk, O. Sklyarchuk, Ye. Nykoniuk, A. Rybka, V. Kutny, A. E. Bolotnikov, R. B. James

Author Affiliations +

Proceedings Volume 9213, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XVI; 92131G (2014) https://doi.org/10.1117/12.2062754
Event: SPIE Optical Engineering + Applications, 2014, San Diego, California, United States

Abstract

We investigated the passage of dark currents through semi-insulating crystals of Cd(Zn)Te with weak n-type conductivity that are used widely as detectors of ionizing radiation. The crystals were grown from a tellurium solution melt at 800 ^оС by the zone-melting method, in which a polycrystalline rod in a quartz ampoule was moved through a zone heater at a rate of 2 mm per day. The synthesis of the rod was carried out at ~1150 ^оС. We determined the important electro-physical parameters of this semiconductor, using techniques based on a parallel study of the temperature dependence of current-voltage characteristics in both the ohmic and the space-charge-limited current regions. We established in these crystals the relationship between the energy levels and the concentrations of deep-level impurity states, responsible for dark conductivity and their usefulness as detectors.

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V. Sklyarchuk, P. Fochuk, I. Rarenko, Z. Zakharuk, O. Sklyarchuk, Ye. Nykoniuk, A. Rybka, V. Kutny, A. E. Bolotnikov, and R. B. James "Mechanisms of the passage of dark currents through Cd(Zn)Te semi-insulating crystals", Proc. SPIE 9213, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XVI, 92131G (5 September 2014); https://doi.org/10.1117/12.2062754

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