Paper
20 March 2015 Recent progress of negative-tone imaging with EUV exposure
Toru Fujimori, Toru Tsuchihashi, Toshiro Itani
Author Affiliations +
Abstract
This study describes the recent progress of negative-tone imaging with EUV exposure (EUV-NTI) compared with positive-tone development (PTD). NTI uses organic solvent-based developer to provide low swelling and smooth-dissolving behavior. Therefore, EUV-NTI is expected to offer several advantages in terms of performance, especially for improving line-width roughness (LWR), which is expected to resolve the resolution, LWR, and sensitivity (RLS) tradeoff. Herein, novel chemical amplified resist materials for EUV-NTI are investigated to improve LWR and sensitivity. Results indicate that the EUV-NTI has better performance than PTD, with ‘single digit mJ/cm2,while maintaining the LWR performance. Furthermore, EUV-NTI processing such as the pre-applied bake (PAB) temperature, post-exposure bake (PEB) temperature, development procedure, and rinse procedure are very effective for improving the lithographic performance. In addition, the lithographic performance with NXE3100 scanner is also reported.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Toru Fujimori, Toru Tsuchihashi, and Toshiro Itani "Recent progress of negative-tone imaging with EUV exposure", Proc. SPIE 9425, Advances in Patterning Materials and Processes XXXII, 942505 (20 March 2015); https://doi.org/10.1117/12.2085706
Lens.org Logo
CITATIONS
Cited by 1 scholarly publication.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Line width roughness

Extreme ultraviolet lithography

Lithography

Scanners

Semiconducting wafers

Silicon

Extreme ultraviolet

RELATED CONTENT

EUV process improvement with novel litho track hardware
Proceedings of SPIE (March 27 2017)
EUV for HVM towards an industrialized scanner for HVM...
Proceedings of SPIE (March 19 2018)
Performance of the ASML EUV Alpha Demo Tool
Proceedings of SPIE (March 22 2010)
Latest cluster performance for EUV lithography
Proceedings of SPIE (March 23 2012)

Back to Top