Printing circuits with 4nm feature size: similarities and differences between EUV and optical lithographies

Michael S Yeung; Eytan Barouch

doi:10.1117/12.2087322

18 March 2015 Printing circuits with 4nm feature size: similarities and differences between EUV and optical lithographies

Michael S Yeung, Eytan Barouch

Author Affiliations +

Proceedings Volume 9426, Optical Microlithography XXVIII; 94260R (2015) https://doi.org/10.1117/12.2087322
Event: SPIE Advanced Lithography, 2015, San Jose, California, United States

Abstract

One of the main concerns about EUV lithography is whether or not it can be extended to very high numerical aperture. Recently, a waveguide effect in high-NA EUV lithography was observed. This effect serves to overcome the problem of shadowing in EUV lithography and allows EUV lithography to be extended to the 4-nm node. In this paper, an exact eigenmode analysis is presented to explain the observed effect. This waveguide effect is then applied to simulate the printing of 4-nm lines and spaces with excellent aerial-image contrast and peak intensity. The feasibility of EUV lithography for printing logic circuits containing general 2D patterns with 4-nm feature size is also demonstrated.

Citation Download Citation

Michael S Yeung and Eytan Barouch "Printing circuits with 4nm feature size: similarities and differences between EUV and optical lithographies", Proc. SPIE 9426, Optical Microlithography XXVIII, 94260R (18 March 2015); https://doi.org/10.1117/12.2087322

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