Paper
9 January 2015 Al-doped MgZnO/p-AlGaN heterojunction and their application in ultraviolet photodetectors
Kuang-Po Hsueh, Po-Wei Cheng, Wen-Yen Lin, Hsien-Chin Chiu, Jinn-Kong Sheu, Yu-Hsiang Yeh
Author Affiliations +
Proceedings Volume 9444, International Seminar on Photonics, Optics, and Its Applications (ISPhOA 2014); 94440K (2015) https://doi.org/10.1117/12.2074817
Event: International Seminar on Photonics, Optics, and Applications 2014, 2014, Sanur, Bali, Indonesia
Abstract
In this study, n-type Al-doped MgxZn1-xO (AMZO) films were deposited onto p-Al0.08Ga0.92N by using radiofrequency magnetron sputtering followed by annealing at 800°C in nitrogen ambient for 60 s. The film was highly transparent and had transmittances exceeding 95% in the visible region and a sharp absorption edge visible in the ultraviolet region. A high leakage current was obtained in the current-voltage (I-V) characteristics of the GMZO/AlGaN n-p junction diode. The AMZO/AlGaN photodetector based on the AMZO film exhibited a dark current of 1.56 μA at Vbias = -3V. The peak responsivity of the photodetector was approximately 200 nm and a cutoff wavelength was observed at approximately 250 nm.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kuang-Po Hsueh, Po-Wei Cheng, Wen-Yen Lin, Hsien-Chin Chiu, Jinn-Kong Sheu, and Yu-Hsiang Yeh "Al-doped MgZnO/p-AlGaN heterojunction and their application in ultraviolet photodetectors", Proc. SPIE 9444, International Seminar on Photonics, Optics, and Its Applications (ISPhOA 2014), 94440K (9 January 2015); https://doi.org/10.1117/12.2074817
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KEYWORDS
Photodetectors

Ultraviolet radiation

Visible radiation

Annealing

Heterojunctions

Absorption

Nitrogen

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