Approaches to highly efficient UV emitters based on AlGaN quantum wells

Shuhei Ichikawa; Mitsuru Funato; Yoichi Kawakami

doi:10.1117/12.2208779

26 February 2016 Approaches to highly efficient UV emitters based on AlGaN quantum wells

Shuhei Ichikawa, Mitsuru Funato, Yoichi Kawakami

Proceedings Volume 9748, Gallium Nitride Materials and Devices XI; 97480U (2016) https://doi.org/10.1117/12.2208779
Event: SPIE OPTO, 2016, San Francisco, California, United States

Abstract

Various semipolar AlGaN/AlN quantum wells (QWs) with atomically smooth surfaces and abrupt interfaces are fabricated on AlN bulk substrates. While keeping the crystal qualities, we can easily adjust the Al compositions in the semipolar AlGaN QWs by changing growth temperatures, similar to the case of conventional (0001) AlGaN QWs. Due to the small internal electric fields in the semipolar QWs, the energy fluctuations are extremely suppressed and the radiative recombination lifetimes are drastically shortened, compared with the (0001) QWs. The shorter radiative recombination lifetimes realize much stronger emissions from the semipolar QWs.

Citation Download Citation

Shuhei Ichikawa, Mitsuru Funato, and Yoichi Kawakami "Approaches to highly efficient UV emitters based on AlGaN quantum wells", Proc. SPIE 9748, Gallium Nitride Materials and Devices XI, 97480U (26 February 2016); https://doi.org/10.1117/12.2208779

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