Ultrawide-band-gap (UWBG) semiconductors have attracted much attention for deep-ultraviolet (DUV) photonics and high-power electronics. However, the physical understanding is in infancy, preventing the potential capacities of UWBG semiconductors to be drawn out. Therefore, the electronic and optical properties should be fully elucidated using such as DUV spectroscopy. Whereupon, another obstacle stands that DUV spectroscopy itself is immature. In the presentation, we therefore talk about the development of DUV scanning near-field optical microscope and the optoelectronic properties of AlN studied by DUV luminescence spectroscopy.
ScAlMgO4 (0001) is a substrate material suitable for heteroepitaxy of In0.17Ga0.83N because lattice matching can be achieved. Although direct growth of In0.17Ga0.83N layers on ScAlMgO4 (0001) substrates is ideal, direct growth by metalorganic vapor phase epitaxy results in nitrogen polarity. In contrast, In0.17Ga0.83N low temperature buffer layers can flip the polarity. On the group-III-polar In0.17Ga0.83N/ScAlMgO4 templates red-emitting quantum wells (QWs) and LEDs were fabricated. The QWs had much better internal quantum efficiencies than those on conventional GaN/sapphire templates, and electrical drive of LEDs was demonstrated.
Spontaneous and stimulated emission spectroscopies were performed on transparent aluminum nitride (AlN) substrates grown by hydride vapor-phase epitaxy. The stimulated emission was observed from cryogenic to room temperatures and the origin was assigned by the spontaneous emission spectra and existing theories. AlN exhibited a purely excitonic stimulated emission at cryogenic temperatures, whereas the stimulated emission mechanism at room temperature originated from an exciton-electron scattering process. The temperature-induced and excitation-power-induced stimulated emission crossovers were found and interpreted in terms of the peculiar excitonic structure of AlN.
A nitride semiconductor InGaN is a key material for visible optical devices such as light-emitting diodes (LEDs) and laser diodes. Recently, InGaN-based red LEDs attain increasing interest due to potential application in micro- LED displays. However, the emission efficiency is the highest in the blue spectral range and drastically decreases at longer emission wavelengths. One reason is the large lattice mismatch between the InGaN emitters and the host material of GaN. To circumvent lattice-mismatch-induced issues, ScAlMgO4 substrates are attractive because the host material can be replaced from GaN to InGaN lattice matched to ScAlMgO4, which can reduce strain in the InGaN emitters. Herein, we demonstrate far-red (∼700 nm wavelength) LEDs based on InxGa1−xN/InyGa1−yN quantum wells (x < y) grown on lattice-matched InyGa1−yN/ScAlMgO4 (0001) templates for the first time.
This conference presentation was prepared for the Plasmonics: Design, Materials, Fabrication, Characterization, and Applications XX conference at SPIE Optics + Photonics 2022.
InGaN-based three dimensional structures fabricated on (-1-12-2) through a regrowth technique are promising for highly efficient polychromatic emitters because the structures do not involve (0001) polar-plane facets. We experimentally demonstrate (1) fast radiative recombination in all the facet quantum wells, (2) structure and eventually emission color tunability through the control of mask geometry for the regrowth, and (3) LED operation with pastel and white color emission. These findings suggest promising features of our polar-plane-free faceted InGaN quantum wells as the next generation visible emitters.
Photoluminescence, electroluminescence, and bias-dependent time-resolved photoluminescence spectroscopies are performed to study the current injection efficiency, internal quantum efficiency, and light external quantum efficiency of 265-nm AlGaN DUV LEDs grown on AlN substrates. The studies showed that the current injection and light extraction efficiencies, and not the internal quantum efficiency, limit the external quantum efficiency. To solve the issue, we revisited the effect of Si-doping in AlN. Our spectroscopic study deduced the significantly lower neutral Si donor bound exciton and Si donor binding energies than those reported, indicating the possibility to realize highly conductive and transparent n-type AlN:Si layers.
Photoluminescence spectroscopy using a scanning near-field optical microscope (SNOM) is a powerful technique to study luminescence properties of III-Nitride semiconductors. To date, we have developed a SNOM with an excitation and a detection wavelength of 210 nm and >220 nm, respectively.[1] The deep-ultraviolet (DUV) SNOM has the shortest operation wavelength ever reported and visualizes the localized emission nature of Al-rich AlGaN quantum wells with a spatial resolution exceeding 150 nm. In the presentation, recent progresses of our study using the DUV-SNOM are given.
[1] Ishii et al., APL Photonics 4, 070801 (2019).
GaN/AlN ultrathin quantum wells (QWs) were grown by metalorganic vapor phase epitaxy using a self-limiting process of GaN thickness to the monolayer (ML) level. 1 ML GaN/AlN QWs emit at 225 nm. The photoluminescence (PL) intensity ratio between low and room temperatures is improved from 0.1% for a conventional AlGaN-based QW emitting at 235 nm to 5% the 1 ML GaN QW. Further improvement to 50% was achieved by an ultrathin GaN QW on r-plane, showing promise of ultrathin GaN QWs as efficient UV emitters.
The surface plasmon (SP) resonance was used to increase the emission efficiencies toward high efficiency light-emitting diodes (LEDs). We obtained the enhancements of the electroluminescence from the fabricated plasmonic LED device structure by employing the very thin p+-GaN layer. The further enhancements should be achievable by optimization of the metal and device structures. Next important challenge is to extend this method from the visible to the deep UV region. By using Aluminum, we obtained the enhancements of emissions at ~260 nm from AlGaN/AlN quantum wells. We succeeded to control the SP resonance by using the various metal nanostructures. These localized SP resonance spectra in the deep-UV regions presented here would be useful to enhance deep UV emissions of super wide bandgap materials such as AlGaN/AlN. We believe that our approaches based on ultra-deep UV plasmonics would bring high efficiency ultra-deep UV light sources.
The effects of the structure design of AlGaN-based quantum wells (QWs) on the optical properties are discussed. We demonstrate that to achieve efficient emission in the germicidal wavelength range (250 – 280 nm), AlxGa1−xN QWs in an AlyGa1−yN matrix (x < y) is quite effective, compared with those in an AlN matrix: Time-resolved photoluminescence and cathodoluminescence spectroscopies show that the AlyGa1−yN matrix can enhance the radiative recombination process and can prevent misfit dislocations, which act as non-radiative recombination centers, from being induced in the QW interface. As a result, the emission intensity at room temperature is about 2.7 times larger for the AlxGa1−xN QW in the AlyGa1−yN matrix than that in the AlN matrix. We also point out that further reduction of point defects is crucial to achieve an even higher emission efficiency.
We propose to use quantum wires (QWRs) instead of quantum wells (QWs) to improve the internal quantum efficiency of AlGaN UV emitters. Crystal growth of AlGaN on the AlN vicinal (0001) surface with bunched steps creates Al-less AlGaN QWRs at the bunched step edges. Cathodoluminescence maps indicate the formation of the potential minima along the step edges. Photoluminescence spectroscopy reveals that the thermal quenching in the QWRs is suppressed by approximately one order of magnitude, compared with that in conventional (0001) AlGaN/AlN QWs, and the spectra are dominated by the QWR emissions at room temperature. We attribute the superior optical property of the AlGaN QWRs to the enhanced radiative recombination processes.
Various semipolar AlGaN/AlN quantum wells (QWs) with atomically smooth surfaces and abrupt interfaces are fabricated on AlN bulk substrates. While keeping the crystal qualities, we can easily adjust the Al compositions in the semipolar AlGaN QWs by changing growth temperatures, similar to the case of conventional (0001) AlGaN QWs. Due to the small internal electric fields in the semipolar QWs, the energy fluctuations are extremely suppressed and the radiative recombination lifetimes are drastically shortened, compared with the (0001) QWs. The shorter radiative recombination lifetimes realize much stronger emissions from the semipolar QWs.
We describe the optical properties of semi/non-polar InGaN and AlGaN quantum wells. In semipolar (11¯22) InGaN QWs, spatially uniform but spectrally broad emissions are observed. This finding is interpreted with consideration of the exciton migration length shortened by the fast radiative recombination lifetime due to the reduced electric field. Non/semipolar AlGaN QWs are also fabricated. In the semipolar (1¯102) AlGaN QWs, the radiative recombination lifetimes faster than that in the (0001) QW are confirmed experimentally. As a consequence, much stronger emission is achieved from the semipolar AlGaN QWs at room temperature
Faceted three-dimensional (3D) AlGaN/AlN multiple quantum wells (MQWs) with semipolar {1 ̄101} and polar (0001)
planes are fabricated by a regrowth technique based on metalorganic vapor phase epitaxy (MOVPE) on trench-patterned
AlN templates. Similar 3D microfacet structures with different height are formed on top of and at the bottom of the AlN
trench. Cathodoluminescence (CL) spectra are separately acquired at semipolar and (0001) facet QWs at room
temperature (RT). The peak energies of {1 ̄101} facet QWs and (0001) facet QWs on higher 3D structures are 5.42 and
5.43 eV, respectively, while that of (0001) facet QWs on lower 3D structures is 5.23eV. Through structural analyses
using transmission electron microscopy (TEM), the peak energy difference between the {1 ̄101} QWs and the lower
(0001) QWs is ascribed mainly to suppressed internal electric fields in the {1 ̄101} facet QWs. Furthermore, Al spatial
distribution causes the peak energy difference between the (0001) facet QWs.
In this paper, micromachining inside of direct and indirect semiconductor, such as zinc oxide crystal (ZnO) and
single-crystalline silicon(c-Si) using femtosecond laser pulses is successfully demonstrated. In the case of ZnO, oxygen
vacancy or interstitial zinc was three-dimensionally induced by the near-infrared femtosecond laser pulse irradiation. The
threshold energy for oxygen defect formation increased with increasing in a pulse width. The mechanism of the pulsewidth
dependence of the damage threshold inside ZnO could be interpreted in terms of the excitonic Mott transition to
the electron-hole plasma which depends on the electron plasma density induced by the laser irradiation. We have also
successfully micromachined inside c-Si using infrared ultrashort laser pulses (λ = 1.24 μm). Optical microscope
observation under an infrared lamp illumination indicates low density material or scattering structure was formed in the
vicinity of the focal spot.
Monolithic multi-color light-emitting diodes (LEDs) based on micro-structured InGaN/GaN quantum wells are
demonstrated. The microstructure is created through regrowth on SiO2 mask stripes along the [1¯100] direction
and consists of (0001) and {11¯22} facets. The LEDs exhibit polychromatic emission, including white, due to the
additive color mixture of facet-dependent emission colors. Altering the growth conditions and mask geometry
easily controls the apparent emission color. Simulations predict high light extraction efficiencies due to their
three-dimensional structures. Furthermore, we demonstrate that the apparent emission colors can externally be
controlled over a wide spectral range that encompasses green to blue or white at a color temperature of 4000
K to blue along the Planckian locus. The controllability relies on the facet-dependent polychromatic emissions;
the pulsed current operation with the appropriate duties varies their relative intensities and the consequent
apparent colors without seriously affecting the total number of emitted photons, particularly for the blue to
green variation. The proposed LEDs can be fabricated through a simple process and, therefore, may be a key
device for advanced solid-state lighting.
Sufficient lighting is sometimes required when surgeons watch the mediastinum through the 7x7cm thoracic window in
video-assisted thoracoscopic (VATS) lobectomy. It is thus important to develop the "ultimately localized solid-statelighting"
because the distance between the window and the surface of the lung is as short as 4-5 cm. Our new idea was to
place the module composed of red, green and blue light emitting diodes (RGB LEDs) at the tip of the retractor.
Compared to a conventional endoscopic lighting consisting of halogen lamp, this method has lead to the bright and
shadowless illumination within the entire thoracic cavity since the white RGB LEDs are emitted unidirectionally from
the cylinder-shaped camera component, moving the shadows from the surgical instruments to the side of the incision. It
also should be noted that we found an effective principle for controlling the color rendering of each biomaterial through
the synthesis of LED lighting spectra, by which the visual performance of surgeons can be coordinated. Therefore, we
believe that "medical RGB LEDs" will contribute to the safe operation, and will be developed to a standard lighting
system in clinical settings with bright surgical fields in the near future.
We measure gain spectra for commercial (Al,In)GaN laser diodes with peak gain wavelengths of 470 nm, 440 nm,
405 nm, and 375 nm, covering the spectral range accessible with electrical pumping. For this systematic study we
employ the Hakki-Paoli method, i.e. the laser diodes are electrically driven and gain is measured below threshold
current densities. The measured gain spectra are reasonable for a 2D carrier system and understandable when
we take into account homogeneous and inhomogeneous broadening. While inhomogeneous broadening is almost
negligible for the near UV laser diode, it becomes the dominant broadening mechanism for the longer wavelength
laser diodes. We compare the gain spectra with two models describing the inhomogeneous broadening. The first
model assumes a constant carrier density, while the second model assumes a constant quasi Fermi level. Both
are in agreement with the experimental gain spectra, but predict very different carrier densities. We see our
measurements as providing a set of standard gain spectra for similar laser diodes covering a wide spectral range
which can be used to develop and calibrate theoretical manybody gain simulations.
The distance between the LED and the surface of the target organ is about 4-5 cm, and we think this will become the "ultimate super-localized LED lighting". In an experiment with swine, we placed a LED module at the tip of the retractor. When compared to endoscopic lighting, this method illuminated the entire thoracic cavity more brightly. Since the light is emitted from the cylinder-shaped camera component, the light is unidirectional, and the shadows from the surgical instruments are moved to the side of the incision. Retractor LED lights provided enough light in the thoracic cavity. we believe that "medical white LEDs" can contribute in clinical settings as a light source for performing safe operations with bright surgical fields in the near future. Also, we use our LEDs for new real business. In the summer of 2004, LED lighting was world first used in the 1200 year-old Gion Festival for the first time in history as "a lighting device that does not destroy cultural assets by light heat". And the next is "Lighting at the "Diva status at diva gate" and the "Thousand Armed Avalokiteshwara in innermost sanctuary in the main hall" at Kiyomizudera in Kyoto". It was a great success, and we were invited back in the spring of 2005 and for future applications. We think this is the first real application of LEDs as an outdoor lighting device. The number of people who visit Kiyomizudera is 4000,000 annually, and LEDs were adopted to illuminate the diva gate.
We report a dramatic increase in the photoluminescence (PL) emitted from InGaN/GaN quantum wells (QW), obtained by covering these sample surface with thin metallic films. Remarkable enhancements of PL peak intensities were obtained from In0.3Ga0.7N QWs with 50 nm thick silver and aluminum coating with 10 nm GaN spacer. These PL enhancements can be attributed to strong interaction between QWs and surface plasmons (SPs). No such enhancements were obtained from samples coated with gold, as its well-known plasmon resonance occurs only at longer wavelengths. We also showed that QW-SP coupling increase the internal quantum efficiencies by measuring the temperature dependence of PL intensities. QW-SP coupling is a very promising method for developing the super bright light emitting diodes (LEDs). Moreover, we found that the metal nano-structure is very important facto to decide the light extraction. A possible mechanism of QW-SP coupling and emission enhancement has been developed, and high-speed and efficient light emission is predicted for optically as well as electrically pumped light emitters.
Scanning near field optical microscopy (SNOM) has been developed to assess the recombination mechanism in low-dimensional nitride semiconductors by employing spatial and temporal photoluminescence (PL) mapping under illumination-collection at cryogenic temperatures. The near-field PL images taken at an InxGa1-xN single-quantum-well (SQW) structure revealed the variation of both intensity and peak energy according to the probing location with the scale less than a few tens of a nanometer. The PL, the linewidth of which was about 60meV in macroscopic measurements, was separated into several peaks with the linewidth of about 12 meV if the SNOM-PL was taken with the aperture size of 30 nm. Clear spatial correlation was observed between PL intensity and PL peak-photon-energy, where the regions of strong PL intensity correspond to those of low PL peak-photon-energy. Time-resolved SNOM-PL study showed the important role of exciton/carrier localization in the recombination mechanism in InxGa1-xN-based quantum structures.
Everywhere in the world, the highest quality and quantity of lighting is required during the surgical operations. However, the surgical approach has had many types and various angles, common ceiling surgical halogen shadow less lighting system cannot provide an adequate amount of beams because the surgeons' heads hinder the illuminations from reaching the operation field. Therefore, we have designed surgical lighting system composed of white LEDs equipped on both sides of goggles. In fact, we succeeded in the first internal shunt operation in the left forearm using the surgical LED lighting sytem on 11th Sept 2000. In the operation with sitting position, it was about 34 cm from the operation field to the surgeon's eye point. Therefore, in the next approach, we have to try the operations with usual standing position. To get the more powerful LED light source, we have tried to make "power white LED module" composed with Nichia white LEDs (NCCx002) on AlN plate. Then we have tried the general thoracic operation with LED goggles composed "power white LED modules" on 9th December 2002.
The carrier dynamics in InGaN layers and InGaN multiquantum-well (MQW) structures were studied by employing the degenerate pump and probe, time-resolved photoluminescence (PL), and white-light pump and probe measurements. The results from degenerate pump and probe measurements showed that the internal field existed in undoped in InGaN but then was screened by the electrons supplied by the Si atoms in Si-doped InGaN. The rise time of Pl in InGaN MQW obtained using the upconversion method was very fast, below 1ps, the mechanism of which is due to the carrier-carrier interaction enhanced by the residual electrons. The ΔOD spectra in InGaN MQW observed in white-light pump and probe measurements indicated that the carrier temperature was substantially higher than the lattice temperature even at 40ps after pulsed photo-pumping.
Everywhere in the world, the highest quality and quantity of lighting is required during the surgical operations. However, the surgical approach has had many types and various angles, common ceiling surgical halogen lighting system cannot provide an adequate amount of beams because the surgeons' heads hinder the illuminations from reaching the operation field. Here, we newly design surgical lighting system composed of white LEDs equipped on both sides of goggles, which controls the lighting beams to the gazing point. With this system, it is just needed for surgeons to wear light plastic goggles with high quality LEDs made by Nichia. In fact, we have succeeded in the first internal shunt operation in the left forearm using the surgical LED lighting system on 11th Sept 2000. The electrical power for the system was supplied from lithium-ion battery for 2 hours. Since the white LEDs used were composed of InGaN-blue-emitters and YAG-yellow-phosphors, the color rendering property was not sufficient in the reddish colors. Therefore, in the next approach, it is very important to develop the spectral distribution of white LED to render inherent color of raw flesh such as skin, blood, fat tissue and internal organs. To improve the color rendering in red colors, some adjustments should be given in the fluorescents layers. Design of goggle is also very important for cutting into the real practical market of white LEDs.
The first internal shunt operation in the left forearm has successfully been performed using the surgical lighting goggle composed of InGaN-yttrium aluminum garnet (YAG)-based white light emitting diode(LED) arrays. This system supplies a total luminous flux of about 200 lumen for several hours by driving with rechargeable Li-ion batteries. Further increase in luminous flux can be achieved by both the progress of emission efficiency of white LEDs and the development of dense packaging technique of LED chips. Moreover, the color rendering properties of white LEDs are inferior to the standard illuminant especially in violet, green and red spectral range. In this paper, several device structures are proposed for achieving power lighting and for higher color rendering properties. The key technology for power lighting is how to radiate the heat out of LED chips, and that for higher color rendering is how to add desired illumination-spectral-components to LEDs according to the application fields.
Nonradiative dynamics of the carriers and/or excitons created by the photoexcitation in InGaN-based light emitting diodes (LEDs) with blue (460 nm, 470 nm), green (510 nm, 540 nm), and amber (600 nm) emissions were observed by using the transient grating (TG) method which is one of the third-order nonlinear spectroscopy. The dynamics of carries and/or exciton diffusion and dynamics of heat energy released by the nonradiative recombination were observed by the time profile of the TG signals in picosecond and nanosecond time region, respectively. The diffusion coefficients and the temperature change by the heat generation were detected for several LEDs and potted against the peak wavelengths of emission (In composition in active layers). Those results were compared with the results of the time-resolved photoluminescence (PL) spectroscopy. Dependence of In composition on the radiative and nonradiative recombination lifetimes, the luminescence intensities, the internal quantum efficiencies, the heat generation and conduction processes, and the diffusion coefficients of excitons and/or careers were interpreted by the model in terms of the fluctuation and phase separation of In composition.
Everywhere in the world, the highest quality and quantity of lighting is required during the surgical operations. However, the surgical approach has had many types and various angles, common ceiling surgical halogen lighting system cannot provide an adequate amount of beams because the surgeons' heads hinder the illuminations from reaching the operation field. Here, we newly design surgical lighting system composed of white LEDs equipped on both sides of goggles, which controls the lighting beams to the gazing point. With this system, it is just needed for surgeons to wear light plastic goggles with high quality LEDs made by Nichia. In fact, we have succeeded in the first internal shunt operation in the left forearm using the surgical LED lighting system on 11th Sept 2000. The electrical power for the system was supplied from lithium-ion battery for 2 hours. Since the white LEDs used were composed of InGaN- blue-emitters and YAG-yellow-phosphors, the color rendering property was not sufficient in the reddish colors. Therefore, in the next approach, it is very important to develop the spectral distribution of white LED to render inherent color of raw flesh such as skin, blood, fat tissue and internal organs.
Dopamine hydrochloric acid salt in aqueous solution was excited at 266 nm Al2O3:Ti laser and the sufficient fluorescence emission peaking at 330 nm was detected with a streak camera. The fluorescence decay curve was fitted by 1- exponential functions, with the lifetime of approximately 0.80 ns. The influence of deep-UV laser excitation on cells is also discussed for the direct observation of dopamine in the living cells. In addition, it is needed to detect the dopamine fluorescence in the living cell sensitively, and separately from emission of other fluorescent species. When instrumental arrangement and time-resolved spectral analysis can make it possible to solve such problems, direct visualization of the secretion process of individual cells will be achieved by the laser-induced native fluorescence imaging microscopy, without using any additional fluorescent probes. This quantitative imaging technique will provide a useful noninvasive approach for the study of dynamic cellular changes and the understanding of the molecular mechanisms of information transporting processes.
Recombination dynamics of spontaneous and stimulated emissions have been assessed in InGaN-based light emitting diodes (LEDs) and laser diodes (LDs), by employing time- resolved photoluminescence and pump and probe spectroscopy. As for an In0.02Ga0.98N-ultraviolet-LED, excitons are weakly localized by 15 meV at low temperature, but they become almost free at room temperature. It was found that addition of small amount of In results in the reduction of nonradiative recombination centers originating from point defects. The internal electric field does exist in InGaN active layers, and induces a large modification of excitonic transitions. However, it alone does not explain the feature of spontaneous emission observed in an In0.3Ga0.7N- blue-LED such as an anomalous temperature dependent of peak energy, almost temperature independence of radiative lifetimes and mobility-edge type behavior, indicating an important role of exciton localization.
ZnCdSe/ZnSe multiple quantum well (MQW) transmission and reflection photomodulators operating at room temperature were fabricated employing quantum-confined Stark effect on the exciton absorption. Samples were grown on p-type GaAs substrates by MBE with an i-Zn0.87Cd0.13Se/ZnSe MQW heterostructure sandwiched by a ZnSe p-n junction. The transmission modulator was constructed with a Zn0.87Cd0.13Se/ZnSe MQW glued onto a piece of ITO film-covered glass with silver paste and epoxy. To avoid absorption in GaAs substrates, a window with a diameter of about 2 mm was opened using a selective etch. For the reflective use an Al mirror was deposited on the glass back surface, the device then operates in reflection with the light to be modulated making a double pass through the active quantum well region, thereby increasing the modulation amplitude. Measurement results are given in this paper for transmission, reflection, differential transmission, differential absorption, and differential reflection as a function of the incident photon wavelength and the applied field.
Photocurrent spectrum (PC) is reported both at room temperature and at 77 K on p-i-n Zn1-xCdxSe/ZnSe multiple quantum well heterostructures (x approximately equals 0.12) grown by molecular beam epitaxy. Almost all the exciton transitions, allowed and forbidden, associated with the two lowest electron and three highest hole subbands are clearly observed. With the increase of well width from 22 angstrom to 54 angstrom, an evolution of excitonic structure in PC spectra is demonstrated. Theoretical calculations show a quite good agreement with the measurement results, and from the comparison between theory and experiment, an exiton binding energy for heavy hole of 28 meV, and for light hole of 20 meV are obtained for this type of quantum wells.
Gas-source molecular beam epitaxy (GSMBE) was applied for the growth of ZnMgSSe layers and quantum well (QW) structures. The source materials were elemental Zn and Se, as well as gas sources of bis- methylcyclopentadienyl-magnesium ((MeCp)2Mg) and H2S. Mg and S compositions were well controlled by the flow rate of (MeCp)2Mg and H2S, respectively. ZnSe/ZnMgSSe QWs with abrupt heterointerface have successfully been grown on [100]-oriented GaAs substrates under in-situ monitoring of specular beam intensity oscillation in reflection high energy electron diffraction (RHEED). Photoluminescence (PL) at 4.2 K revealed sharp and intense emission from single QWs, which is attributed to n equals 1 heavy-hole free exciton. The photopumped lasing of a double heterostructure was achieved at room temperature with low threshold excitation intensity (110 kW/cm2), suggesting formation of well-defined heterostructures and promising potential of GSMBE for device applications.
We report the effect of the well width on room temperature operation of II-VI p-i-n quantum Stark effect modulators using ZnSe-ZnCdSe multiple quantum well structures within ZnSe p-n junctions. Results are given for the theoretical calculation of exciton binding energy and Stark shift, absorption and differential absorption as a function of the applied electric field. An optimum well width is estimated in current structures for the achievement of the largest (Delta) T/T by means of both theoretical and experimental approaches.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.