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4 November 2016 Spin injection devices with high mobility 2DEG channels (Conference Presentation)
Mariusz Ciorga, Martin Oltscher, Thomas Kuczmik, Josef Loher, Andreas Bayer, Dieter Schuh, Dominique Bougeard, Dieter Weiss
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Proceedings Volume 9931, Spintronics IX; 99311S (2016) https://doi.org/10.1117/12.2236895
Event: SPIE Nanoscience + Engineering, 2016, San Diego, California, United States
Abstract
Effective electrical spin injection into two-dimensional electron gas (2DEG) is a prerequisite for many new functionalities in spintronic device concepts, with the Datta-Das spin field effect transistor [1] being a primary example. Here we will discuss some of the results of our studies on spin injection devices with high mobility 2DEG confined in an inverted AlGaAs/GaAs heterojunction and a diluted ferromagnetic semiconductor (Ga,Mn)As employed as a source and a detector of spin-polarized carriers. Firstly we will show that nonlocal spin valve signal in such devices can significantly exceed the prediction of the standard model of spin injection based on spin drift-diffusion equations [2], what leads to conclusion that ballistic transport in the 2D region directly below the injector should be taken into account to fully describe the spin injection process [3]. Furthermore, we demonstrate also a large magnetoresistance (MR) signal of ~20% measured in local configuration, i.e., with spin–polarized current flowing between two ferromagnetic contacts. To our knowledge, this is the highest value of MR observed so far in semiconductor channels. The work has been supported by Deutsche Forschungsgemeinschaft (DFG) through SFB689. [1] S. Datta and B. Das, Appl. Phys. Lett. 56, 665 (1990) [2] M. Oltscher et al., Phys. Rev. Lett. 113, 236602 (2014) [3] K. Cheng and S. Zhang, Phys. Rev. B 92, 214402 (2015)
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Mariusz Ciorga, Martin Oltscher, Thomas Kuczmik, Josef Loher, Andreas Bayer, Dieter Schuh, Dominique Bougeard, and Dieter Weiss "Spin injection devices with high mobility 2DEG channels (Conference Presentation)", Proc. SPIE 9931, Spintronics IX, 99311S (4 November 2016); https://doi.org/10.1117/12.2236895
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KEYWORDS
Ferromagnetics
Semiconductors
Signal processing
Spintronics
Field effect transistors
Heterojunctions
Instrument modeling
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