Our prior investigations showed that alloying CdTe with selenium results in improved material characteristics, such as a reduction in the concentration of secondary-phase particles, better compositional uniformity and less sub-grain boundary networks, as compared to CdTe/CdZnTe. However, by alloying with Se, the band-gap of CdTeSe is significantly reduced from the value for CdTe, which is the main drawback for high-resistivity CdTeSe compounds useful for radiation detection. In order to increase the band-gap, we are now growing Cd1-xZnxSeyTe1-y crystals for detector applications. The effect of Se alloying with CdZnTe will be discussed in terms of the concentration of secondary phases, stress-related defects such as sub-grain boundaries and their networks. Characterization results for the transport properties of the as-grown materials will also be discussed.
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