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5 March 2022 Demonstration of 606nm-wavelength InGaN-based amber micro-LEDs toward red emission
Zhe Zhuang, Daisuke Iida, Martin Velazquez-Rizo, Kazuhiro Ohkawa
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Proceedings Volume PC12001, Gallium Nitride Materials and Devices XVII; PC1200113 (2022) https://doi.org/10.1117/12.2610278
Event: SPIE OPTO, 2022, San Francisco, California, United States
Abstract
We demonstrated amber InGaN-based micro LEDs (47 × 47 µm2) with 606 nm peak emission at 20 A/cm2. The amber LEDs were obtained the output power density of 2.26 mW/mm2 at 20 A/cm2 by on-wafer EL measurement. Also, the peak on-wafer EQE was obtained as 0.56%. The peak wavelength of the micro-LEDs exhibited a large blue-shift from 624 to 591 nm at 5 to 100 A/cm2. We evaluated the temperature stability of the micro-LEDs. It found that the characteristic temperature was gradually increased with current density increase because SRH non-radiative recombination could be suppressed at high current densities.
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Zhe Zhuang, Daisuke Iida, Martin Velazquez-Rizo, and Kazuhiro Ohkawa "Demonstration of 606nm-wavelength InGaN-based amber micro-LEDs toward red emission", Proc. SPIE PC12001, Gallium Nitride Materials and Devices XVII, PC1200113 (5 March 2022); https://doi.org/10.1117/12.2610278
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KEYWORDS
Light emitting diodes
Indium gallium nitride
Quantum wells
External quantum efficiency
Gallium nitride
Light sources and illumination
Patterned sapphire substrate
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