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5 March 2022 β-Ga2O3 epitaxy and power devices from metal-organic chemical vapor deposition
Esmat Farzana, Fikadu Alema, Takeki Itoh, Nolan Hendricks, Akhil Mauze, Andrei Osinsky, James Speck
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Proceedings Volume PC12002, Oxide-based Materials and Devices XIII; PC120020H (2022) https://doi.org/10.1117/12.2617832
Event: SPIE OPTO, 2022, San Francisco, California, United States
Abstract
β-Ga2O3 epitaxy from metal-organic chemical vapor deposition (MOCVD) has exhibited low background defects and high mobility which are promising for high-power devices. Vertical field-plate Schottky diodes have been fabricated using MOCVD β-Ga2O3 epitaxy that showed punch through breakdown with a specific on-resistance (Ron,sp) of 0.67 mΩ-cm2. This Ron,sp is among the lowest of comparable β-Ga2O3 drift layer thickness reports and can be contributed from the high-mobility MOCVD β-Ga2O3 epitaxy. We also demonstrated Pseudo vertical diodes fabricated on a thicker MOCVD β-Ga2O3 on Fe-doped substrate that showed higher voltage, better leakage current, and improved surface properties compared to the thinner films on Sn-doped substrate epitaxy.
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Esmat Farzana, Fikadu Alema, Takeki Itoh, Nolan Hendricks, Akhil Mauze, Andrei Osinsky, and James Speck "β-Ga2O3 epitaxy and power devices from metal-organic chemical vapor deposition", Proc. SPIE PC12002, Oxide-based Materials and Devices XIII, PC120020H (5 March 2022); https://doi.org/10.1117/12.2617832
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KEYWORDS
Metalorganic chemical vapor deposition
Chemical vapor deposition
Epitaxy
Dielectrics
Doping
Homoepitaxy
Lithium
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