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13 June 2022 EUV phase scatterometry with linearized rigorous scattering
Stuart Sherwin, Ryan Miyakawa, Eric Gullikson, Laura Waller, Andrew Neureuther, Patrick Naulleau
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Proceedings Volume PC12051, Optical and EUV Nanolithography XXXV; PC1205109 (2022) https://doi.org/10.1117/12.2617291
Event: SPIE Advanced Lithography + Patterning, 2022, San Jose, California, United States
Abstract
With the coming introduction of new EUV absorbers, there is an increasing need for actinic phase metrology, which is sensitive to both thin-film reflectance as well as 3D scattering effects. One promising measurement is actinic scatterometry, which can be carried out with relatively low hardware complexity while still being sensitive to the wavelength of interest. However, a drawback of scatterometry is the difficulty of computationally inverting the scattering process to interpret the measurements. We present a computational framework for linearizing the relationship between the measured intensity and the unknown phase using a set of rigorous scattering simulations of geometries sampled from a known random distribution. Once the scattering dataset has been generated no further heavy computations are required, and at runtime the phase can be extracted using only linear operations. We perform simulations to quantify the accuracy and precision of such a measurement, and to assess requirements on noise, coherence, and target size.
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Stuart Sherwin, Ryan Miyakawa, Eric Gullikson, Laura Waller, Andrew Neureuther, and Patrick Naulleau "EUV phase scatterometry with linearized rigorous scattering", Proc. SPIE PC12051, Optical and EUV Nanolithography XXXV, PC1205109 (13 June 2022); https://doi.org/10.1117/12.2617291
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KEYWORDS
Scattering
Scatterometry
Extreme ultraviolet
Phase measurement
Reflectivity
Reflectometry
Thin films
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