2D perovskites have broad technological appeal because of their tunable mechanical, optical, and electrical properties. For flexible optoelectronic applications, it is necessary to determine how mechanical stresses affect their optoelectronic properties. We compare the impact of strain on the photoluminescence (PL) spectra and charge carrier recombination rates of two different 2D perovskite materials, synthesized using either phenethylammonium or butylammonium cations. Both perovskite materials exhibit strong PL enhancement, redshifts of the PL emission wavelength, and longer recombination lifetimes for compressive strains of ≲1%. These results are discussed in relation to the materials’ band structures and trap states.
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