Presentation
21 March 2023 Impacts of vacancy clusters on the recombination dynamics in Mg-implanted GaN on GaN structures
Author Affiliations +
Abstract
The results of complimentary time-resolved photoluminescence and positron annihilation measurements on Mg-implanted GaN on GaN fabricated using various I/I sequences will be shown to identify the species and quantify the concentrations and minority carrier capture coefficients of major midgap recombination centers (MGRCs) created by the I/I processes. Because vacancy clusters comprised of Ga vacancies (VGa) and N vacancies (VN) such as (VGaVN)3 were assigned as major vacancy-type defects and the room-temperature photoluminescence lifetime for the NBE emission increased with decreasing their concentration, (VGaVN)3 are assigned as major nonradiative recombination centers with electron capture coefficient of 5×10-6 cm3s-1, which is an order of magnitude larger than the hole capture coefficient of VGaVN in n-GaN (6×10-7 cm3s-1). Financial supports: CSTI-SIP, MEXT (JPJ005357, JPJ009777, JP16H06427, JP21H01826), PNCRD TECHMATSTRATEG-III/0003/2019-00 and PNSC 2018/29/B/ST5/00338.
Conference Presentation
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shigefusa F. Chichibu, Kohei Shima, Hiroko Iguchi, Tetsuo Narita, Keita Kataoka, Hideki Sakurai, Michal Bockowski, Jun Suda, Tetsu Kachi, Shinya Takashima, Ryo Tanaka, Katsunori Ueno, Masaharu Edo, Shoji Ishibashi, and Akira Uedono "Impacts of vacancy clusters on the recombination dynamics in Mg-implanted GaN on GaN structures", Proc. SPIE PC12421, Gallium Nitride Materials and Devices XVIII, (21 March 2023); https://doi.org/10.1117/12.2646375
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KEYWORDS
Gallium nitride

Luminescence

Annealing

Doping

Gallium

Magnesium

Ultraviolet radiation

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