Recent development of GaN Power switching devices with Ion Implantation technology

Tetsu Kachi; Hideki Sakurai; Testo Narita; Maciej Matys; Jun Suda

doi:10.1117/12.2649083

21 March 2023 Recent development of GaN Power switching devices with Ion Implantation technology

Tetsu Kachi, Hideki Sakurai, Testo Narita, Maciej Matys, Jun Suda

Author Affiliations +

Proceedings Volume PC12421, Gallium Nitride Materials and Devices XVIII; (2023) https://doi.org/10.1117/12.2649083
Event: SPIE OPTO, 2023, San Francisco, California, United States

Abstract

Selective doping technique by ion implantation was applied to power devices. A novel activation method for p-type doping named as UHPA (Ultra High-Pressure Annealing) was recently developed. Using this method, edge termination of FLR (Field Limiting Rings) structure by Mg ion implantation for a pn diode was formed, and the improvement of the breakdown voltage was confirmed. JBS (Junction Barrier Schottky) diodes were also fabricated, which showed high performance such as breakdown voltage of 675V, specific on-resistance of 0.67mΩ·cm2 and avalanche capability. The activation of Mg using UHPA has enabled p-type selective doping even in GaN power devices. Financial supports: MEXT (JPJ005357 and JPJ009777)

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Citation Download Citation

Tetsu Kachi, Hideki Sakurai, Testo Narita, Maciej Matys, and Jun Suda "Recent development of GaN Power switching devices with Ion Implantation technology", Proc. SPIE PC12421, Gallium Nitride Materials and Devices XVIII, (21 March 2023); https://doi.org/10.1117/12.2649083

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