Selective doping technique by ion implantation was applied to power devices. A novel activation method for p-type doping named as UHPA (Ultra High-Pressure Annealing) was recently developed. Using this method, edge termination of FLR (Field Limiting Rings) structure by Mg ion implantation for a pn diode was formed, and the improvement of the breakdown voltage was confirmed. JBS (Junction Barrier Schottky) diodes were also fabricated, which showed high performance such as breakdown voltage of 675V, specific on-resistance of 0.67mΩ·cm2 and avalanche capability. The activation of Mg using UHPA has enabled p-type selective doping even in GaN power devices.
Financial supports: MEXT (JPJ005357 and JPJ009777)
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