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14 March 2023 III-N materials for UV light emitters: from atomistic structure to optical properties (Conference Presentation)
S. Schulz
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Proceedings Volume PC12441, Light-Emitting Devices, Materials, and Applications XXVII; PC1244106 (2023) https://doi.org/10.1117/12.2647961
Event: SPIE OPTO, 2023, San Francisco, California, United States
Abstract
Semiconductor heterostructures utilizing the III-N material aluminium nitride (AlN) have attracted significant interest for optoelectronic device applications in the ultraviolet (UV) spectral range. We will discussion the impact of alloy fluctuations on the electronic and optical properties of (Al,Ga)N and (Al,In)N materials by means of atomistic theoretical studies. Moreover, we present a theoretical analysis of the impact of random alloy fluctuations on the electronic and optical properties of c-plane (Al,Ga)N/AlN quantum wells. Finally, we will give an outlook for potential ways to tailor the electronic and optical properties of UV light emitters by utilizing for instance boron containing III-N alloys.
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S. Schulz "III-N materials for UV light emitters: from atomistic structure to optical properties (Conference Presentation)", Proc. SPIE PC12441, Light-Emitting Devices, Materials, and Applications XXVII, PC1244106 (14 March 2023); https://doi.org/10.1117/12.2647961
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KEYWORDS
Ultraviolet radiation
Optical properties
Quantum wells
Light emitting diodes
Aluminum nitride
Deep ultraviolet
Aluminum
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