Presentation
12 March 2024 Advanced nano-characterization of an AlInN/GaN-based photonic bandgap crystal laser structure
Frank Bertram, Gordon Schmidt, Christoph Berger, Peter Veit, Jürgen Bläsing, Armin Dadgar, André Strittmatter, Juergen Christen
Author Affiliations +
Abstract
Using nano-cathodoluminescence performed in scanning transmission electron microscope (STEM-CL), we have investigated a photonic-bandgap-crystal (PBC) laser structure at T = 17 K. In cross-sectional STEM images the full device structure is clearly resolved. The most dominant luminescence originates from the 3-fold MQW of the active region. The MQW shows a distinct peak wavelength change in growth direction indicating different structural and/or chemical properties of the individual quantum wells. In detail, a clear shift from 427 nm to 438 nm from the first to the top QW is observed, respectively.
Conference Presentation
© (2024) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Frank Bertram, Gordon Schmidt, Christoph Berger, Peter Veit, Jürgen Bläsing, Armin Dadgar, André Strittmatter, and Juergen Christen "Advanced nano-characterization of an AlInN/GaN-based photonic bandgap crystal laser structure", Proc. SPIE PC12880, Physics and Simulation of Optoelectronic Devices XXXII, PC1288005 (12 March 2024); https://doi.org/10.1117/12.3000941
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KEYWORDS
Photonic crystals

Laser crystals

Crystals

Gallium nitride

Quantum processes

Quantum wells

Scanning electron microscopy

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