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9 March 2024 Low-pressure acidic ammonothermal (LPAAT) growth of large diameter nearly bowing-free GaN crystals
Shigefusa F. Chichibu, Kouhei Kurimoto, Quanxi Bao, Yutaka Mikawa, Makoto Saito, Daisuke Tomida, Tohru Ishiguro, Kohei K. Shima
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Proceedings Volume PC12886, Gallium Nitride Materials and Devices XIX; PC1288601 (2024) https://doi.org/10.1117/12.3001028
Event: SPIE OPTO, 2024, San Francisco, California, United States
Abstract
In this presentation, seeded growths of large diameter GaN crystals using the low-pressure acidic ammonothermal (LPAAT) method operated at around 100 MPa will be demonstrated. Nearly bowing- and mosaic-free GaN crystals exhibiting the full-width at half-maximum values for the 0002 X-ray rocking curves below 20 arcsec were achieved on high lattice coherency c-plane AAT seeds with gross dislocation densities in the order of 104 cm−2. The photoluminescence spectra of the grown crystals exhibited a predominant near-band-edge emission at 295 K, of which intensity was one order of magnitude higher than the characteristic deep-state emission called "yellow luminescence band". A nearly bowing-free large diameter c-plane GaN crystal was eventually obtained.
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Shigefusa F. Chichibu, Kouhei Kurimoto, Quanxi Bao, Yutaka Mikawa, Makoto Saito, Daisuke Tomida, Tohru Ishiguro, and Kohei K. Shima "Low-pressure acidic ammonothermal (LPAAT) growth of large diameter nearly bowing-free GaN crystals", Proc. SPIE PC12886, Gallium Nitride Materials and Devices XIX, PC1288601 (9 March 2024); https://doi.org/10.1117/12.3001028
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KEYWORDS
Gallium nitride
Crystals
Semiconducting wafers
Chip manufacturing
Electronic components
Gallium
Manufacturing
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