Carrier transport in single-walled carbon nanotubes: Si heterojunctions

Ivan V. Komissarov; Brendan Habert; Lizaveta A. Dronina; Alexandr L. Danilyuk; Matteo Salvato; Serghej L. Prischepa; Roman Sobolewski

doi:10.1117/12.3023060

19 June 2024 Carrier transport in single-walled carbon nanotubes: Si heterojunctions

Ivan V. Komissarov, Brendan Habert, Lizaveta A. Dronina, Alexandr L. Danilyuk, Matteo Salvato, Serghej L. Prischepa, Roman Sobolewski

Author Affiliations +

Proceedings Volume PC13013, Organic Electronics and Photonics: Fundamentals and Devices IV; PC130130V (2024) https://doi.org/10.1117/12.3023060
Event: SPIE Photonics Europe, 2024, Strasbourg, France

Abstract

We performed comprehensive studies of current transport across SWCNT-Si heterojunctions, considered as a promising component for advanced photodetectors. Low-doped n-type Si was used as a substrate and SWCNT films were deposited on its top by a wet method out of solutions. We collected current-voltage (I-V) characteristics of the heterojunctions in the 78-300 K temperature range under dark conditions. In the forward bias, the I-V curves exhibited two regimes, namely, the “low” and “high” voltage regimes. We applied the Cheung–Cheung method to evaluate the height of the Schottky barrier, the series resistance, and the ideality factor, for both regimes. For tested samples, the ideality factor is very well fitted with the T-1/2 dependence. The slope of this dependency for the “high” voltage regime decreases with the increase of the SWCNT concentration, what agrees with the Card–Rhoderick model that the slope in this regime should be inversely proportional to the density of states at the SWCNT/SiO2 interface, which in turn is proportional to the SWCNT concentration. The crossover voltage between the two voltage regimes decreased linearly with the temperature for all our samples.

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Ivan V. Komissarov, Brendan Habert, Lizaveta A. Dronina, Alexandr L. Danilyuk, Matteo Salvato, Serghej L. Prischepa, and Roman Sobolewski "Carrier transport in single-walled carbon nanotubes: Si heterojunctions", Proc. SPIE PC13013, Organic Electronics and Photonics: Fundamentals and Devices IV, PC130130V (19 June 2024); https://doi.org/10.1117/12.3023060

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KEYWORDS

Heterojunctions

Carbon

Diodes

Interfaces

Silicon

Resistance

Single walled carbon nanotubes

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