Laser beam scanning using near-field scanning optical microscopy nanoscale silicon-based photodetector

Matityahu Karelits; Yaakov Mandelbaum; Avraham Chelly; Avi Karsenty

doi:10.1117/1.JNP.12.036002

23 July 2018 Laser beam scanning using near-field scanning optical microscopy nanoscale silicon-based photodetector

Matityahu Karelits, Yaakov Mandelbaum, Avraham Chelly, Avi Karsenty

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Journal of Nanophotonics, Vol. 12, Issue 3, 036002 (July 2018). https://doi.org/10.1117/1.JNP.12.036002

Abstract

As part of the efforts to enhance the near-field scanning optical microscopy and the detection of evanescent waves, a silicon Schottky diode, shaped as a truncated trapezoid photodetector and sharing a subwavelength pin-hole aperture, has been designed and simulated. Using finite elements method and two-dimensional advanced simulations, the detector has been horizontally shifted across a vertically oriented Gaussian beam, which is projected on top of the device. Both electrical and electro-optical simulations have been conducted. These results are promising toward the fabrication of a new generation of photodetector devices.

CC BY: © The Authors. Published by SPIE under a Creative Commons Attribution 4.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

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Matityahu Karelits, Yaakov Mandelbaum, Avraham Chelly, and Avi Karsenty "Laser beam scanning using near-field scanning optical microscopy nanoscale silicon-based photodetector," Journal of Nanophotonics 12(3), 036002 (23 July 2018). https://doi.org/10.1117/1.JNP.12.036002

Received: 14 February 2018; Accepted: 11 July 2018; Published: 23 July 2018

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