23 April 2019 Impact of channel scaling on performance of single SiC nanowire UV photodetector
Ali Uzun, Kasif Teker
Author Affiliations +
Abstract
We have investigated the channel length dependence of the key performance parameters, such as speed, responsivity, external quantum efficiency (EQE), and responsivity–bandwidth product, of the silicon carbide nanowire-based ultraviolet (UV) photodetector devices with different channel lengths ranging from 120 to 800 nm. The device with the shortest channel length of 120 nm at low bias voltage of 0.5 V exhibited very high responsivity and EQE of 7.73  ×  103  A  /  W and 7.77  ×  104  %  , respectively, under illumination to 254-nm UV light. Our experiments revealed that reduction in channel length resulted in significant enhancement in speed, responsivity, EQE, and responsivity–bandwidth product of the photodetector. This study suggests that scaling down in channel length could enable the development of high-speed and sensitive photodetector devices for emerging nanophotonic and nanoelectronic applications capable of operating at low voltages.
© 2019 Society of Photo-Optical Instrumentation Engineers (SPIE) 1934-2608/2019/$25.00 © 2019 SPIE
Ali Uzun and Kasif Teker "Impact of channel scaling on performance of single SiC nanowire UV photodetector," Journal of Nanophotonics 13(2), 026003 (23 April 2019). https://doi.org/10.1117/1.JNP.13.026003
Received: 21 January 2019; Accepted: 8 April 2019; Published: 23 April 2019
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CITATIONS
Cited by 3 scholarly publications.
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KEYWORDS
Silicon carbide

Ultraviolet radiation

Photodetectors

External quantum efficiency

Nanowires

Silicon

Crystals

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