Enhanced optical effect in a high electron mobility transistor device

B. B. Pal; H. Mitra

doi:10.1117/12.61285

1 April 1993 Enhanced optical effect in a high electron mobility transistor device

B. B. Pal, H. Mitra

Author Affiliations +

Optical Engineering, Vol. 32, Issue 4, (April 1993). https://doi.org/10.1117/12.61285

Abstract

When radiation is allowed to fall on the spacing between the source and gate and the gate and drain of a AlGaAs/GaAs high electron mobility transfer device, a photovoltage develops across the heterojunction. This significantly enhances the device characteristics.

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B. B. Pal and H. Mitra "Enhanced optical effect in a high electron mobility transistor device," Optical Engineering 32(4), (1 April 1993). https://doi.org/10.1117/12.61285

Published: 1 April 1993

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