Dr. Adam T. Neal Profile

Dr. Adam T. Neal

at Air Force Research Laboratory

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Proceedings Article | 10 October 2023 Poster + Paper

Growth of 6.2 Å semiconductor topological materials on lattice engineered virtual substrates

H. Haugan, A. Hilton, K. Mahalingam, A. Neal, S. Elhamri, R. Bedford, K. Eyink

Proceedings Volume 12687, 126870G (2023) https://doi.org/10.1117/12.2675731

KEYWORDS: Quantum wells, Antimony, Gallium arsenide, Gallium, Transmission electron microscopy, Quantum buffers, Interfaces, Gallium antimonide, Crystals, Aluminum

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To test whether conventional infrared materials can be used to control the electronic wavefunction to form a topological state, a 6.2 Å metamorphic (InAs/InGaSb/InAs) quantum well (QW) absorber with ~60 meV of hybridization gap (Δ) was investigated. We developed a thick metamorphic InGaSb buffer layer on GaAs wafer to create a 6.2 Å lattice constant for the QW growths. The lattice constant of virtual substrates (VSs) was very close to the target value of 6.2 Å, however the resulting crystalline quality of the VSs was inefficient for topological insulator. The cross-sectional transmission electron microscopy image revealed that the dislocation density in the InGaSb buffer layer was high closer to the GaAs substrate and gradually reduced upon continued growth. However some mismatch-related defects were propagated into the absorber region, consequently degraded the transport quality of absorber. The QW absorber grown on VS had a low mobility. The mobility was dramatically improved by selecting pseudomorphic QW or superlattice absorber with a small Δ that was grown on a lattice-matched GaSb substrate. Hence, in order for the proposed 6.2 Å materials to be viable for sensing applications, a critical effort will be the development of better optimized metamorphic buffers for the design or of highlyhybridized psedomorphic designs that can be grown on lattice-matched substrates.

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