We report on ZnO wafer bonded III-nitride light emitting diodes (LEDs). ZnO wafer was selectively etched to form a hexagonal pyramid shape. For enhancing light extraction and heat conductivity, two types of LED structures were demonstrated: one is having patterned GaN at the wafer bonded interface between GaN and ZnO, the other is the LED having no sapphire. The experimental results of electrical and optical characteristics indicate the high potential of these types of LEDs for solid state lighting sources.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.