We have performed the operando analysis using synchrotron radiation nanobeam X-ray diffraction (nanoXRD) techniques combined with the pump-probe method to quantitatively analyze strain induced by the inverse piezoelectric effect (IPE) in AlGaN/GaN HEMTs in operation. The c-plane lattice spacing change of the AlGaN barrier depending on applied gate voltage to the device and its transient states were successfully detected with a nanosecond resolution. Since our nanoXRD analysis directly characterizes IPE-induced crystalline lattice structures, it paves the way for novel approaches to elucidate defect formation mechanisms in nitride semiconductor based HEMT devices.
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