KEYWORDS: Oscillators, Terahertz radiation, Sensors, Silicon, Field effect transistors, CMOS technology, Antennas, Transistors, Imaging spectroscopy, Signal to noise ratio
In this paper, we address the state-of-the-art of CMOS-based electronic sources and detectors developed for the THz frequency range. In particular, we present a system operating at 250 GHz exhibiting input power-related signal-to-noise ratio (SNR) exceeding 70 dB in the direct detection regime for one Hz equivalent noise bandwidth. It combines the state-of-the-art detector based on CMOS field-effect-transistors (FET) and a voltage-controlled oscillator (VCO) employing SiGe bipolar transistors provided by the BiCMOS process. The manuscript presents different emitter–detector pair operation modalities, including data transmission, spectroscopy, and imaging.
This paper presents an investigation of terajets formation by dielectric periodic structure at terahertz frequencies in effective medium regime (photonic metamaterial). The dispersions of effective permittivity for three periodic structures formed by different types of plastics (ABS, PLA, Crystal) were analytically obtained for both regimes. Numerical simulation of this structure was performed by using COMSOL Multiphysics. The terajet formation was numerically shown.
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