We investigate the ultrafast photoinjection process initiated by a few-femtosecond optical pulse in monocrystalline undoped germanium with attosecond transient reflectivity spectroscopy. By comparison with theoretical calculations, we decouple several distinct but concurring physical phenomena that are found to exhibit different timing within the pump envelope. As a result of their complex interplay, we found that intra-band motion hinders charge injection, in contrast with what has previously been observed in other semiconductors.
Light fields can sculpt the optical and electronic properties of solids by injecting charge carriers from the valence to the conduction band. The photoinjection process typically unfolds on time scales shorter than the period of the driving radiation, thus being - for visible and near-infrared light - below one femtosecond. Despite being pervasive, only a few experiments investigated the photoinduced charge excitation produced by an intense, ultrashort laser pulse with attosecond temporal resolution. Here we used attosecond transient reflection spectroscopy in combination with a two-fold, advanced theoretical approach to demonstrate that there is not a single photoexcitation mechanism responsible for charge injection in germanium. Instead, it stems from multi-photon absorption and band dressing, while intra-band motion has a hindering effect.
The recent integration of silicene in field-effect transistors (FET) opened new challenges in the comprehension of the chemical and physical properties of this elusive two-dimensional allotropic form of silicon. Intense efforts have been devoted to the study of the epitaxial Silicene/Ag(111) system in order to elucidate the presence of Dirac fermion in analogy with graphene; strong hybridization effects in silicene superstructures on silver have been invoked as responsible for the disruption of π and π* bands. In this framework, the measured ambipolar effect in silicene-based FET characterized by a relatively high mobility, points out to a complex physics at the silicene-silver interface, demanding for a deeper comprehension of its details on the atomic scale. Here we elucidate the role of the metallic support in determining the physical properties of the Si/Ag interface, by means of optical techniques combined with theoretical calculations of the optical response of the supported system. The silicene/Ag(111) spectra, which turn out to be strongly non-additive, are analyzed in the framework of theoretical density functional based calculations allowing us to single out contributions arising from different localization. Electronic transitions involving silver states are found to provide a huge contribution to the optical absorption of silicene on silver, compatible with a strong Si-Ag hybridization. The results point to a dimensionality-driven peculiar dielectric response of the two-dimensional-silicon/silver interface, which is confirmed by means of Transient-Reflectance spectroscopy. The latter shows a metallic-like carrier dynamics, (both for silicene and amorphous silicon), hence providing an optical demonstration of the strong hybridization arising in silicene/Ag(111) systems.
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