Dr. Anqi Hu Profile

Dr. Anqi Hu

at Beijing Univ of Posts and Telecommunications

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Proceedings Article | 5 November 2020 Paper

Research on in-situ oxidation of the copper covered by graphene

Huijun Tian, Qiaoli Liu, Anqi Hu, Xia Guo

Proceedings Volume 11567, 1156726 (2020) https://doi.org/10.1117/12.2579791

KEYWORDS: Graphene, Oxidation, Photodetectors, Copper, Particles, Scanning electron microscopy, Oxides, Raman spectroscopy, Chemical vapor deposition

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Graphene-based photodetector with ultra-high responsivity is an important research field of low dimensional optoelectronics applications. A number of hybrid graphene/quantum dots photodetectors with high responsivity have been developed. In this paper, the in-situ oxidation of the copper covered by monolayer graphene was studied under the oxygen-rich condition. It is found that the oxidation process first occurs at the grain boundary of graphene and the oxide is Cu₂O. The intensity ratio of 2D band and G band of graphene is ~3, and the defect D peak is absent, which indicates that the quality of graphene is not damaged during the oxidation process. The hybrid transfer-free graphene/Cu₂O photodetector is fabricated by in-situ copper oxidation. Under 450 nm laser illumination, the responsivity of the photodetector is 3.8×10⁶ A/W at 0.2 V. The gain is up to 1.1×10⁷ , which is due to the modulation of Fermi level of graphene by Cu₂O quantum dots. The photodetector exhibits the specific detectivity of 3.6×10¹¹ Jones. This work opens a feasible pathway to develop transfer-free graphene/semiconductor photodetector with high responsivity.

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