This paper reports on the use of a seeded vapour phase technique to grow bulk crystals of CdTe onto
commercially available 50 mm diameter (211)B GaAs substrates. High quality crystals, several mm in
thickness were grown on the GaAs at linear growth rates of ~ 120 μm/h. Characterisation by double
and triple axis XRD showed the best crystals to have θ-2θ FWHMθ values of ~ 24 arc sec
corresponding to low strain dispersion (< 2×10-4). Rocking curve scans included two to three sharp
peaks, indicative of some small mosaicity. When mapped across a the surface of the crystal, the
FWHM was uniform and < 93 arc sec. Contactless resistivity showed a similar degree of uniformity
with a mean value of 4.4 × 109 ± 1.6 × 109 Ω cm. Infrared microscopy showed that within the resolution
of the microscope (~ 5 μm) there were very few Te inclusions.
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