CsPbBr3 and other perovskite semiconductors are rapidly emerging as strong competitors to TlBr and CZT, both in terms of innate properties and potentially significantly lower production cost. These crystals can be grown from the solution as well as melt. However, there has been very few studies on understanding the effects of bandgap and crystalline defects, polarization, stoichiometry and other growth parameters on the charge transport properties and detector reproducibility. In this study, we will report on these interconnected parameters for CsPbBr3 gamma detectors grown by the Bridgman technique.
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