The Bragg diffraction condition of surface-emitting lasing action is analyzed and Γ2-1 mode is chosen for lasing. Two
types of lateral cavity photonic crystal surface emitting lasers (LC-PCSELs) based on the PhC band edge mode lateral
resonance and vertical emission to achieve electrically driven surface emitting laser without distributed Bragg reflectors
in the long wavelength optical communication band are designed and fabricated. Deep etching techniques, which rely on
the active layer being or not etched through, are adopted to realize the LC-PCSELs on the commercial AlGaInAs/InP
multi-quantum-well (MQW) epitaxial wafer. 1553.8 nm with ultralow threshold of 667 A/cm2 and 1575 nm with large
power of 1.8 mW surface emitting lasing actions are observed at room temperature, providing potential values for mass
production with low cost of electrically driven PCSELs.
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