Accelerated tests for Single Event Effect (SEE) that irradiate the target with far higher fluence beam are typically applied to investigate the device sensitivity to atmospheric neutron. Considering the neutrality and strong penetrability of neutron, devices are frequently placed in parallel to save time. For nanoscale devices, however, the results may be significantly influenced. The possibility of applying multiple-board parallel testing in accelerated experiments of atmospheric-neutron-induced soft errors was investigated using a 22-nm Static Random-Access Memory (SRAM) Field Programmable Gate Array (FPGA). To simplify the analysis, several empty Printed Circuit Boards (PCBs) were employed as the upstream boards. Both Block Random-Access Memory (BRAM) and Configuration Random-Access Memory (CRAM) were tested under the neutron beam provided by Atmospheric Neutron Irradiation Spectrometer (ANIS), showing similar results. For high-energy neutrons, device sensitivity decreases as the number of upstream PCBs increases, although the influence seems weak. The drop in cross sections from no-PCB to 20-PCBs is less than 30% for both modules. For thermal neutron testing, however, its sensitivity was greatly suppressed by PCBs. Epoxy resin contained in PCBs is considered to be the key factors for these phenomena due to its high content of hydrogen. Also, neutron can be scattered by copper to lose energy or even be absorbed by it. As a result, the actual fluence of the neutron reaching the device was reduced. Therefore, parallel testing may not be suitable if thermal neutrons need to be considered, but it is practicable for high-energy neutron testing with proper correction algorithms applied.
This article investigates the degradation mechanisms of total ionizing dose (TID) effects in photocouplers under different bias conditions. The irradiation measurement of silicon-based photocoupler devices is carried out by using a 60Co γ-ray source under various radiation bias conditions. The results of the test indicate that the current transfer rate (CTR) of the photocoupler reduces with an increase in the total dose. In addition, the non-luminous traps produced by the TID irradiation in the diffusion region of the PN junction of the light-emitting diode within the photocoupler cause more severe total dose effects when the input current of the device is low. This could be attributed to the charges being captured more easily in such scenarios. These representative results support the reliable application of the photocoupler devices in space radiation environments.
This article investigates the influence of temperature on the total ionizing dose (TID) effects in optical fibers. Radiation induced attenuation (RIA) spectra at 1310 nm were measured in G652, OM, PM1016-C, and homemade B1-R fibers during and after γ-irradiation at different temperatures. The B1-R fibers were doped with varying Al2O3 content in their core and coating layers. Experimental results show that the B1-R fibers have significant lower losses compared with the other three fibers. At a temperature of 25° and a TID does of 50 kGy, the B1-R fiber showed an RIA of only 1.35 dB/Km, while the other three fibers exhibit a minimum loss exceeding 6.44 dB/Km. Furthermore, the B1-R fiber withstood an irradiation does 100 times higher than other optical fibers. For a fixed temperature, the attenuation in B1-R fibers recovered quickly after irradiation, reaching their minimum values approximately 15 days post-irradiation, whereas the other three optical fibers required more than 25 days to recover. This study also delves into the underlying mechanisms contributing to the radiation resistance of B1-R optical fibers. The findings presented in this work offer critical insights for the development of high-performance, radiation resistant fibers, rendering them suitable for deployment in challenging deep space environments characterized by intense radiation conditions.
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