Prof. Charles Surya Profile

Prof. Charles Surya

Dean at Nazarbayev Univ

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Author

Publications (15)

Proceedings Article | 1 March 2019 Paper

Strategies for high-performance perovskite solar cells

Annie Ng, Zhiwei Ren, Changwen Liu, Aleksandra Djurišić, Ruixue Zhu, David Lee Phillips, Charles Surya

Proceedings Volume 10919, 1091905 (2019) https://doi.org/10.1117/12.2516757

KEYWORDS: Perovskite, Crystals, Solar cells, Solar energy, Cryogenics, Absorption, Nanorods, Transparent conductors

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Proceedings Article | 23 February 2018 Paper

Novel growth techniques for the deposition of high-quality perovskite thin films

Annie Ng, Zhiwei Ren, Gang Li, Aleksandra Djurišić, Charles Surya

Proceedings Volume 10533, 105331Y (2018) https://doi.org/10.1117/12.2302468

KEYWORDS: Crystals, Perovskite, Oxygen, Thin films, Annealing, Solar cells, Photovoltaics, Optoelectronics, Optoelectronic devices, Solar energy

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Proceedings Article | 27 February 2016 Paper

Indium oxide-based perovskite solar cells

Qi Dong, Fangzhou Liu, Man Kwong Wong, Aleksandra Djurišić, Zhiwei Ren, Qian Shen, Annie Ng, Charles Surya, Wai Kin Chan

Proceedings Volume 9749, 97491S (2016) https://doi.org/10.1117/12.2212130

KEYWORDS: Solar cells, Photovoltaics, Electron transport, Oxides, Indium, Indium oxide, Solid state electronics, Polymers, Silicon solar cells, Metals, Perovskite, Titanium dioxide, Transparent conductors

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Proceedings Article | 8 March 2014 Paper

Plasma treatment of p-GaN/n-ZnO nanorod light-emitting diodes

Yu Hang Leung, Alan M. Ng, Aleksandra Djurišic, Wai Kin Chan, Patrick W. Fong, Hsien Fai Lui, Charles Surya

Proceedings Volume 8987, 898720 (2014) https://doi.org/10.1117/12.2042305

KEYWORDS: Zinc oxide, Plasma treatment, Heterojunctions, Gallium nitride, Light emitting diodes, Plasma, Electroluminescence, Oxygen, Nitrogen, Nanorods

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Proceedings Article | 15 October 2012 Paper

High quality SnS van der Waals epitaxies on graphene buffer layer

W. Wang, K. Leung, W. Fong, S. Wang, Y.Y. Hui, S.P. Lau, C Surya

Proceedings Volume 8470, 84700E (2012) https://doi.org/10.1117/12.930946

KEYWORDS: Tin, Graphene, Crystals, Thin films, Interfaces, Heterojunctions, Solar cells, Thin film devices, Thin film solar cells, Epitaxy

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Proceedings Article | 15 March 2011 Paper

ZnO nanorods for light-emitting diode applications

Xinyi Chen, Alan M. Ng, Ka Kan Wong, Aleksandra Djurišić, Fang Fang, Wai Kin Chan, Patrick Wai Keung Fong, Hsian Fei Lui, Charles Surya

Proceedings Volume 7940, 79400B (2011) https://doi.org/10.1117/12.878940

KEYWORDS: Zinc oxide, Light emitting diodes, Oxygen, Heterojunctions, Electroluminescence, Annealing, Gallium nitride, Zinc, Scanning electron microscopy, Nanorods

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Proceedings Article | 20 August 2009 Paper

Growth and characterization of Cu2ZnSnS4 nanostructures using anodized aluminum as the growth mask

C. P. Chan, Z. Chen, H. Lam, C. Surya

Proceedings Volume 7411, 741108 (2009) https://doi.org/10.1117/12.828172

KEYWORDS: Nanostructures, Absorption, Copper, Thin films, Zinc, Tin, Aluminum, Sulfur, Solar cells, Scanning electron microscopy

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Proceedings Article | 8 June 2007 Paper

Low-frequency noise characterizations of GaN-based visible-blind UV detectors fabricated using a double buffer layer structure

H. Lui, W. Fong, C. Surya

Proceedings Volume 6600, 66000D (2007) https://doi.org/10.1117/12.724978

KEYWORDS: Gallium nitride, Ultraviolet radiation, Ultraviolet detectors, Aluminum nitride, Optoelectronic devices, Optoelectronics, Crystals, Diodes, Gallium, Nitrogen

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Proceedings Article | 9 October 2005 Paper

Synthesis of tris(8-hydroxyquinoline) aluminum (Alq3) nanowires under different conditions

A. M. Ng, W. Tong, A. Djurisic, Y. Leung, C. Cheung, H. Lui, C. Surya, W. Chan

Proceedings Volume 5937, 59371D (2005) https://doi.org/10.1117/12.614746

KEYWORDS: Nanostructures, Argon, Thin films, Glasses, Scanning electron microscopy, Organic light emitting diodes, Nanolithography, Aluminum, Nanoparticles, Nanowires

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Proceedings Article | 23 May 2005 Paper

Characterization of 1/f noise in GaN-based HEMTs under high dc voltage stress

S. K. Jha, C. F. Zhu, E. Jelenkovic, K. Y. Tong, C. Surya, H. Schweizer, M. Pilkuhn

Proceedings Volume 5844, (2005) https://doi.org/10.1117/12.609283

KEYWORDS: Field effect transistors, Gallium nitride, Ions, Interfaces, Microwave radiation, Reactive ion etching, Temperature metrology, Transistors, Annealing, Heterojunctions

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Proceedings Article | 27 October 2003 Paper

Simple technique for bulk quantity synthesis of ZnO tetrapod nanorods

V. Arul Lenus Roy, Aleksandra Djurisic, Qing Li, Shi Jie Xu, H. Lui, Charles Surya, Ju Gao

Proceedings Volume 5219, (2003) https://doi.org/10.1117/12.504700

KEYWORDS: Zinc oxide, Zinc, Nanostructures, Argon, Scanning electron microscopy, Nanolithography, Nitrogen, Transmission electron microscopy, Nanorods, Nanowires

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Proceedings Article | 12 May 2003 Paper

Study of low-frequency noise in GaN-on-Si films obtained by laser-assisted debonding

C. Chan, P. Lai, Benny Leung, T. Yue, Charles Surya

Proceedings Volume 5113, (2003) https://doi.org/10.1117/12.497674

KEYWORDS: Gallium nitride, Sapphire, Measurement devices, Laser processing, Gallium, Thin films, Silicon, Crystals, Silicon carbide, Temperature metrology

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Proceedings Article | 24 October 2000 Paper

Effects of Zn doping in the substrate on the quantum well intermixing in GaAs/Al0.24Ga0.76As single quantum well structures

Feng Zhao, In Wang Choi, Peter Hing, Shu Yuan, Teik Kooi Ong, Boon Siew Ooi, Jian Jiang, Michael Chan, Charles Surya, E. Herbert Li

Proceedings Volume 4227, (2000) https://doi.org/10.1117/12.405387

KEYWORDS: Quantum wells, Gallium arsenide, Zinc, Diffusion, Annealing, Doping, Gallium, Chemical species, Heterojunctions, Temperature metrology

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Proceedings Article | 11 July 2000 Paper

Effect of indium surfactant on the optical and structural properties of MBE-grown GaN

W. Fong, C. Zhu, Charles Surya, Benny Leung, C. Cheng, Balakrishnan Sundarvel, E. Luo, J. Xu, Ian Wilson

Proceedings Volume 4078, (2000) https://doi.org/10.1117/12.392186

KEYWORDS: Gallium nitride, Luminescence, Indium, Crystals, Gallium, Ions, Temperature metrology, Spectroscopy, Atomic force microscopy, Thin films

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A small indium flux was used as a surfactant during the growth of gallium nitride films by rf-plasma assisted molecular beam epitaxy. The effects of the indium surfactant on the optical and structural properties of undoped GaN were studied by photoluminescence spectroscopy, high-resolution X-ray diffraction, atomic force microscopy, Rutherford backscattering spectroscopy, and low-frequency noise. Photoluminescence spectra show that the GaN thin films grown in the presence of In surfactant exhibit supressed yellow luminescence compared to films grown under the same experimental conditions but without In surfactant. The X-ray rocking curves demonstrate a 20% decrease in the full width at half maximum value for the films grown with In surfactant. AFM studies show that the root mean squared roughness for films grown with and without In surfactant are 5.86 and 6.99 nm respectively, indicating significant improvement in surface morphology. RBS and ion channeling shows the presence of stacking faults and dislocations and GaN growth with In surfactant and stacking faults in GaN grown without In. For the characterization of defect properties in the films we conducted detailed studies of 1/f and Generation-Recombination (G-R) noise on our samples. About 65% reduction in the Hooge parameter was observed in the film grown with In surfactant, indicative of a corresponding reduction in defect states within the material. For f $GTR 500Hz, G-R noise was the dominating fluctuation process. Detailed characterization of the G-R noise over a wide range of temperatures enabled the determination of the energy levels of the traps responsible for the G-R noise. Three different trap levels were observed using noise measurement technique. For films grown without In surfactant, traps with activation energies 806 meV, 241 meV and 100 meV were observed, whereas for samples grown with In surfactant traps were observed at 666 meV, 208 meV and 90 meV. Such systematic reduction in the energy levels of the traps may arise from the relaxation of strains in the material when grown under the application of In surfactant.

Proceedings Article | 11 July 2000 Paper

New multichamber evaporator for organic devices

Qiulai Wang, Weiling Guo, Michael Chan, ShiChuang Liu, E. Herbert Li, Charles Surya

Proceedings Volume 4078, (2000) https://doi.org/10.1117/12.392153

KEYWORDS: Organic materials, Organic light emitting diodes, Metals, Thin films, Doping, Ozone, Plasma treatment, Lithium, Magnesium, Silver

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Showing 5 of 15 publications

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