This report will focus on the status of GaN HEMT based amplifier technology development at RFMD. This technology
is based around GaN on semi-insulating SiC substrates for optimal thermal performance. RFMD's 0.5μm gate
technology features high performance advanced field plate structures, including a unit power cell producing high gain
(21dB), high power density (3-5W/mm at 28V) and high efficiency (65-70 percent) at cellular frequencies. We will
report on transistor and module performance relevant to applications ranging from high power, high bandwidth
amplifiers, to switches and ICs for radar, electronic warfare, cellular infrastructure and homeland security. Additionally,
we will report on reliability results that demonstrate capability for dependable, high voltage operation.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.