In this publication, we consider stitching enablement for High NA EUVL, specifically ‘zooming in’ on vertical line stitching used to create a physical connection between fields on wafer. We discuss stitching CD metrology and analysis using experimental and simulation results for pitch 36 nm dense lines. Experimental results were obtained on the NXE:3400B scanner at imec. CD uniformity across wafer and through slit are investigated as well as the impact from image to image overlap variation and the contribution of reticle CD errors and mask 3D shadowing. In the previous publications, we gave an overview of stitching challenges and various interactions in the stitching zone. In this publication, we focus on the aerial image interaction. Along a stitched vertical line, there are variations in CD creating a certain CD profile. These CD variations were modeled in a rigorous simulator but also observed experimentally. In order to characterize this behavior, we perform CD profile metrology at the stitch. We investigate the root causes of CD variability at the stitch and propose control mechanisms of stitching optimization. A key control mechanism being optical proximity correction (OPC) as well as overlay control.
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